The influence of defects and carriers on lattice dynamics, especially on Raman scattering from semiconductors and metals, is considered; a comparison of the theory with experimental data is made. Phonon scattering by point, line, and plane defects produces a phonon shift and phonon broadening, which influence the Raman line shape. This effect is used for investigating strain at interfaces and for characterizing semiconductor devices. Phonon interaction with carriers involves a Coulomb field excited by optical-phonon vibrations. Our treatment of the electron-phonon interaction is based on the Born-Oppenheimer adiabatic approximation. The effect of carriers is essential near the edge of the ω-k region where Landau damping appears due to the electron-hole excitation. A possibility to determine the electron-phonon coupling constant from experiments with the phonon-plasmon coupled modes is discussed.

PACS: 63.20.−e, 63.20.Dj, 78.30.−j (all) DOI: 10.1070/PU2004v047n03ABEH001735 URL: https://ufn.ru/en/articles/2004/3/b/ 000223338900002 2004PhyU...47..249F Citation: Falkovsky L A "Investigation of semiconductors with defects using Raman scattering" Phys. Usp. 47 249–272 (2004) BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks PT Journal Article TI Investigation of semiconductors with defects using Raman scattering AU Falkovsky L A FAU Falkovsky LA DP 10 Mar, 2004 TA Phys. Usp. VI 47 IP 3 PG 249-272 RX 10.1070/PU2004v047n03ABEH001735 URL https://ufn.ru/en/articles/2004/3/b/ SO Phys. Usp. 2004 Mar 10;47(3):249-272 Оригинал: Фальковский Л А «Исследования полупроводников с дефектами методом комбинационного (рамановского) рассеяния света» УФН 174 259–283 (2004); DOI: 10.3367/UFNr.0174.200403b.0259