Persistent photoconductivity in semiconducting III-V compounds

V.S. Vavilov^a, P.C. Euthymiou^b, G.E. Zardas^b
^aLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
^bDepartment of Physics, University of Athens, 104 Solonos str., Athens, 10680, Greece

Evidence for persistent photoconductivity, i.e., electrical conductivity changes existing for a very long time after the excitation of nonmetallic solids by photons, was furnished back in the 19th century and put to practice even before modern solid-state physics had developed. At present, two complementary models are basically used to explain this phenomenon. One involves the trapping of nonequilibrium charge carriers by point centres of localization (traps) which slows down the recombination of electrons and holes generated by light or charged particles. In the other, electrons and holes are also separated spatially and prevented by potential barriers from recombination. Both types of relaxation process are discussed and experimental data, with special emphasis on the charge separation idea, presented.

PACS: 72.20.Jv, 72.40.+w, 72.80.Ey (all)
DOI: 10.1070/PU1999v042n02ABEH000589
URL: https://ufn.ru/en/articles/1999/2/d/
Web of Science

000079341200004
Citation: Vavilov V S, Euthymiou P C, Zardas G E "Persistent photoconductivity in semiconducting III-V compounds" Phys. Usp. 42 199–201 (1999)

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Оригинал: Вавилов В С, Эфимиу П К, Зардас Дж Е «Долговременная релаксация неравновесной фотопроводимости в полупроводниковых соединениях типа А^IIIВ^V» УФН 169 209–212 (1999); DOI: 10.3367/UFNr.0169.199902e.0209

References (22) ↓ Cited by (12) Similar articles (7)

Gudden B Lichtelektrische Erscheinungen (Berlin: J Springer, 1928)
Bube R H Photoconductivity of Solids (New York: Wiley, 1960) [Translated into Russian (Moscow: IL, 1962)]
Ryvkin S M Fotoelektricheskie Yavleniya v Poluprovodnikakh (Photoelectric Effects in Semiconductors, Moscow: Fizmatgiz, 1963) [Translated into English (New York: Plenum Publ., 1964)]
Sheînkman M K, Shik A Ya Fiz. Tekh. Poluprovodn. 10 209 (1976) [Sov. Phys. Semicond. 10 128 (1976)]
Khokhlov D R, Volkov B A, in Proc. 23rd Int. Conf. Phys. Semicond: Berlin, July 1996 Vol. 4 (Ed. M Scheffler, Singapore: World Scientific, 1996)
Gossick B R J. Appl. Phys. 30 1214 (1959)
Vavilov V S Deîstvie Izlucheniî na Poluprovodniki (Effects of Radiation on Semiconductors, Moscow: Fizmatgiz, 1963) [Translated into English (New York: Plenum Publ., 1965)]
Queisser H J, Theodorou D E Phys. Rev. Lett. 43 401 (1979)
Queisser H J, Theodorou D E Phys. Rev. B 33 4027 (1986)
Brailovskii E Yu, Grigoryan N E, Eritsyan G N Phys. Status Solidi A 62 649 (1980)
Goldberg Yu A et al., in Int. Conf. Optics of Excitons in Condensed Matter, Abstracts (St. Petersburg: Russian Acad. Sci. Publ., 1997) p. 37
Braun S, Grimmeiss H G Solid State Commun. 12 657 (1973)
Lang D V, Logan R A, Jaros M Phys. Rev. B 19 1015 (1979)
Zhao Y G et al. Semicond. Sci. Technol. 7 1359 (1992)
Tsubaki K, Fukui T, Saito H J. Appl. Phys. 60 3224 (1986)
Zardas G E et al. Solid State Commun. 105 77 (1998)
Theodorou D E, Symeonidis C I Phys. Rev. B 37 10854 (1988)
Vavilov V S Usp. Fiz. Nauk 167 407 (1997) [Phys. Usp. 40 387 (1997)]
Saparin G V et al. J. Luminescence 31 - 32 684 (1984)
Vavilov V S, Kiv A E, Niyazova O R Mekhanizmy Obrazovaniya i Migratsii Defektov v Poluprovodnikakh (Mechanisms of Formation and Migration of Defects in Semiconductors, Moscow: Nauka, 1981)
Petritz R L Phys. Rev. 104 1508 (1956)
Ploog K, Dohler G Adv. Phys. 32 285 (1983)