Evidence for persistent photoconductivity, i.e., electrical conductivity changes existing for a very long time after the excitation of nonmetallic solids by photons, was furnished back in the 19th century and put to practice even before modern solid-state physics had developed. At present, two complementary models are basically used to explain this phenomenon. One involves the trapping of nonequilibrium charge carriers by point centres of localization (traps) which slows down the recombination of electrons and holes generated by light or charged particles. In the other, electrons and holes are also separated spatially and prevented by potential barriers from recombination. Both types of relaxation process are discussed and experimental data, with special emphasis on the charge separation idea, presented.

PACS: 72.20.Jv, 72.40.+w, 72.80.Ey (all) DOI: 10.1070/PU1999v042n02ABEH000589 URL: https://ufn.ru/en/articles/1999/2/d/ 000079341200004 Citation: Vavilov V S, Euthymiou P C, Zardas G E "Persistent photoconductivity in semiconducting III-V compounds" Phys. Usp. 42 199–201 (1999) BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks PT Journal Article TI Persistent photoconductivity in semiconducting III-V compounds AU Vavilov V S FAU Vavilov VS AU Euthymiou P C FAU Euthymiou PC AU Zardas G E FAU Zardas GE DP 10 Feb, 1999 TA Phys. Usp. VI 42 IP 2 PG 199-201 RX 10.1070/PU1999v042n02ABEH000589 URL https://ufn.ru/en/articles/1999/2/d/ SO Phys. Usp. 1999 Feb 10;42(2):199-201 Оригинал: Вавилов В С, Эфимиу П К, Зардас Дж Е «Долговременная релаксация неравновесной фотопроводимости в полупроводниковых соединениях типа АIIIВV» УФН 169 209–212 (1999); DOI: 10.3367/UFNr.0169.199902e.0209