Transport phenomena in metals with quantum defects
A.S. Sigov Moscow State Institute of Radio Engineering, Electronics, and Automatics (Technical University), prosp. Vernadskogo 78, Moscow, 117454, Russian Federation
The interaction of quantum defects (defectons) with the conduction electrons is considered. A systematic allowance is made for infrared renormalisations which are due to this interaction and which influence significantly the width of the energy band of defectons and their contribution to physical properties of a metal. An analysis is made of the interaction of deflections with one another and with other defects of the crystal lattice of a metal. The processes of quantum defect clusterisation due to this interaction are studied. The temperature dependences of the transport coefficients are derived both for a metal containing both free defectons and two-level systems, which appear in a number of cases when a quantum defect is captured by a heavy immobile impurity.