Issues

 / 

1993

 / 

May

  

Reviews of topical problems


Light scattering from electron-density fluctuations in multivalley semiconductors and metals

, ,  a
a Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

The theoretical concepts of Raman scattering by free current carriers in semiconductors and metals are reviewed. Various elementary excitations are discussed as the sources of the light-scattering fluctuations: one-particle charge-density fluctuations and plasmons, spin-density fluctuations, and fluctuations of the density of electron energy and momentum. These elementary excitations are common to different solids: metals, semimetals, semiconductors, and superconductors. As an adequate mathematical apparatus that reflects the unitary nature of the Raman spectra of these elementary excitations in various solids, a macroscopic approach to describing their relaxation is proposed. In this approach one distinguishes two mechanisms of relaxation: the diffusion mechanism, in which relaxation occurs via diffusional fluxes of varying nature, and the Mandel'shtam–Leontovich mechanism, in which adiabatic relaxation of the light-scattering fluctuations occurs. In multivalley semiconductors these mechanisms coexist, giving an additive contribution to the reciprocal relaxation time of the fluctuations: in single-valley semiconductors, metals, and superconductors, one of these mechanisms is realized, depending on the details of the electron band structure. Here the correlation function that determines the Raman cross section satisfies the same kinetic or diffusional equation as the fluctuating quantity itself. As technical applications, the possibility is pointed out of contact-free determination of the parameters of the electronic spectrum of semiconductors, metals, semiconductor superlattices, and superconductors.

Fulltext pdf (2.2 MB)
Fulltext is also available at DOI: 10.1070/PU1993v036n05ABEH002181
PACS: 78.35.+c, 78.30.−j, 72.20.Jv (all)
DOI: 10.1070/PU1993v036n05ABEH002181
URL: https://ufn.ru/en/articles/1993/5/d/
Citation: Bairamov B Kh, Voitenko V A, Ipatova I P "Light scattering from electron-density fluctuations in multivalley semiconductors and metals" Phys. Usp. 36 (5) 392–435 (1993)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Байрамов Б Х, Войтенко В А, Ипатова И П «Рассеяние света флуктуациями электронной плотности в многодолинных полупроводниках и металлах» УФН 163 (5) 67–114 (1993); DOI: 10.3367/UFNr.0163.199305d.0067

References (119) Cited by (8) ↓ Similar articles (20)

  1. Bairamov B Kh, Toporov V V, Bayramov F B Phys. Solid State 63 79 (2021)
  2. Ponosov Yu S, Ushakov A V, Streltsov S V Phys. Rev. B 91 (19) (2015)
  3. Bayramov F H, Irmer G et al Jpn. J. Appl. Phys. 50 05FE06 (2011)
  4. Bairamov B Kh, Voitenko V A et al Phys. Solid State 41 763 (1999)
  5. Misochko O V, Sherman E Ya Phys. Solid State 40 23 (1998)
  6. Baîramov B Kh, Voįtenko V A et al JETP Lett. 67 (11) (1998)
  7. Bairamov B Kh, Zakharchenya B P, Toporov V V Jetp Lett. 67 352 (1998)
  8. Gaydar A V, Poroshin V N et al Semicond. Sci. Technol. 9 1790 (1994)

© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions