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The Faraday effect in semimagnetic semiconductors

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A review of experimental and theoretical research on the Faraday effect in a new class of materials–semimagnetic semiconductors (SMS). The authors discuss the mechanism responsible for the giant Faraday effect in SMS, which is based on s, p–d exchange interactions of excitons, electrons, and holes with magnetic ions. The authors also examine the dependence of Faraday rotation (FR) on wavelength, magnetic component concentration, temperature, and magnetic field intensity in A$^2$B$^6\langle$Mn$\rangle$ and A$^2_{1-x}$Mn$_x$B$^6$ crystals, as well as other SMS (GaAs $\langle$Mn$\rangle$, CdP$_2\langle$Mn$\rangle$, Pb$_{1–x}$Mn$_x$I$_2$). They examine the use of FR in the study of the paramagnetic-spin glass transition, the role played by relaxation processes involving magnetic Mn$^{2+}$ ions, excitons, and polarons in the direct and inverse Faraday effects, and the properties of FR in thin SMS films and spin superlattices. Finally, the authors analyze possible applications of the Faraday effect in SMS to practical magnetooptic devices (optical isolators, fiber optic magnetic field sensors).

Fulltext pdf (718 KB)
Fulltext is also available at DOI: 10.1070/PU1990v033n11ABEH002659
PACS: 78.20.Ls, 71.70.Gm, 71.35.−y, 75.50.Pp, 78.66.Li, 85.70.Sq (all)
DOI: 10.1070/PU1990v033n11ABEH002659
URL: https://ufn.ru/en/articles/1990/11/f/
Citation: Nikitin P I, Savchuk A I "The Faraday effect in semimagnetic semiconductors" Sov. Phys. Usp. 33 (11) 974–989 (1990)
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Îðèãèíàë: Íèêèòèí Ï È, Ñàâ÷óê À È «Ýôôåêò Ôàðàäåÿ â ïîëóìàãíèòíûõ ïîëóïðîâîäíèêàõ» ÓÔÍ 160 (11) 167–196 (1990); DOI: 10.3367/UFNr.0160.199011f.0167

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