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A physical standard of the unit of electrical resistance based on the quantum Hall effect

 a,
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
Fulltext pdf (81 KB)
Fulltext is also available at DOI: 10.1070/PU1988v031n09ABEH005627
PACS: 72.20.My, 72.20.Dp (all)
DOI: 10.1070/PU1988v031n09ABEH005627
URL: https://ufn.ru/en/articles/1988/9/h/
Citation: Pudalov V M, Semenchinskii S G "A physical standard of the unit of electrical resistance based on the quantum Hall effect" Sov. Phys. Usp. 31 880–881 (1988)
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Оригинал: Пудалов В М, Семенчинский С Г «Физический эталон единицы электрического сопротивления на основе квантового эффекта Холла» УФН 156 178–181 (1988); DOI: 10.3367/UFNr.0156.198809i.0178

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  1. V.M. Pudalov, S.G. Semenchinskii “Galvanomagnetic properties of a 2D electron layer in silicon under conditions of a quantized Hall resistance28 634–635 (1985)
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  3. V.I. Pustovoit “Effects Connected with Phonon Production in Semiconductors15 832–833 (1973)
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  12. V.N. Alfeev “Properties and Uses of Structures Based on Paraelectrics, Superconductors and Semiconductors19 768–769 (1976)
  13. T.E. Kuzmicheva, S.A. Kuzmichev et alAndreev spectroscopy of iron-based superconductors: temperature dependence of the order parameters and scaling of ⊿L, S with TC57 819–827 (2014)
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  15. L.M. Blinov “Physical properties and applications of Langmuir films30 743–744 (1987)
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  20. N.N. Sirota “Electron and Spin Density Distribution and the Physical Properties of Crystals15 851–852 (1973)

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