RSS feeds
РусскийEnglish
Issue 11, 2024
Volume year page
Issues Authors PACS Subscription For authors

Issues

 / 

1982

 / 

March

←  →

Reviews of topical problems


Spectrum and polarization of hot-electron photoluminescence in semiconductors

 a, , ,
a Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

Experimental and theoretical research on the recombination photoluminescence of free hot electrons in semiconductors (primarily GaAs) is reviewed. The polarization characteristics are discussed. These characteristics reflect, in particular, a momentum alignment of the electrons by linearly polarized light and an effect of a ripple in the constant-energy surfaces in the valence band. The dependence of the linear polarization on the spectrum is discussed in connection with various mechanisms for the energy relaxation of the hot electrons. The depolarization of the hot-electron photoluminescence in a magnetic field is discussed. A procedure is discussed for determining the energy relaxation times and the scale times for intervalley transitions through an analysis of depolarization curves. The energy distribution of the hot electrons is found from the hot-electron photoluminescence spectrum. The recombination luminescence of hot holes is discussed. These holes appear when the semiconductor is illuminated in the spin-split-offsubband.

Fulltext pdf (1.2 MB)
Fulltext is also available at DOI: 10.1070/PU1982v025n03ABEH004519
PACS: 78.55.Ds, 72.20.Jv
DOI: 10.1070/PU1982v025n03ABEH004519
URL: https://ufn.ru/en/articles/1982/3/c/
Citation: Zakharchenya B P, Mirlin D N, Perel’ V I, Reshina I I "Spectrum and polarization of hot-electron photoluminescence in semiconductors" Sov. Phys. Usp. 25 143–166 (1982)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Захарченя Б П, Мирлин Д Н, Перель В И, Решина И И «Спектр и поляризация фотолюминесценции горячих электронов в полупроводниках» УФН 136 459–499 (1982); DOI: 10.3367/UFNr.0136.198203d.0459

Cited by (186) ↓ Similar articles (20)

  1. Zhu P, Alexandradinata A Phys. Rev. B 110 (11) (2024)
  2. Koyama T, Fujisaki A et al Phys. Rev. B 108 (23) (2023)
  3. Saushin A S, Vanyukov V V et al Optical Materials 142 113973 (2023)
  4. Devenson Ja, Stašys Karolis et al Jpn. J. Appl. Phys. 62 040903 (2023)
  5. Zonov R, Fateev A et al Physica Status Solidi (b) 260 (9) (2023)
  6. Krotkus A, Nevinskas I, Norkus R Materials 16 2859 (2023)
  7. Wild A, Mariani E, Portnoi M E Phys. Rev. B 105 (20) (2022)
  8. Fomin L, Krishtop V i dr International Conference on Micro- and Nano-Electronics 2021, (2022) p. 30
  9. Zhang Yu, Xu Ya‐Qiong Advanced Optical Materials 9 (13) (2021)
  10. Mikheev G M, Kogai V Y et al Opt. Express 29 2112 (2021)
  11. Durnev M V, Tarasenko S A Phys. Rev. B 103 (16) (2021)
  12. Lan Sh digital Encyclopedia of Applied Physics 1 (2019) p. 1
  13. Mikheev G M, Kogai V Ya et al Materials Today Communications 21 100656 (2019)
  14. Mikheev G M, Kogai V Ya et al Jetp Lett. 109 704 (2019)
  15. Averkiev N S, Gutkin A A Phys. Solid State 60 2311 (2018)
  16. Norkus R, Arlauskas A, Krotkus A Semicond. Sci. Technol. 33 075010 (2018)
  17. Karpus V, Norkus R et al Opt. Express 26 33807 (2018)
  18. Hortelano V, Weidlich H et al 112 (15) (2018)
  19. Vilkov E A, Dyuzhikov I N et al J. Commun. Technol. Electron. 63 1015 (2018)
  20. Nevinskas I, Vizbaras K et al Opt. Lett. 42 2615 (2017)
  21. He Ch, Ristow O et al Phys. Rev. B 95 (18) (2017)
  22. Vinnichenko M Ya, Makhov I S et al 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), (2016) p. 1
  23. Schmidt Ch B, Priyadarshi Sh et al 108 (10) (2016)
  24. Gulyaev Yu V, Zil’berman P E, Chigarev S G J. Commun. Technol. Electron. 60 411 (2015)
  25. Cicėnas P, Geižutis A et al Opt. Lett. 40 5164 (2015)
  26. Malevich Y V, Adomavičius R et al 115 (7) (2014)
  27. Simion G E, Lyanda-Geller Y B Phys. Rev. B 90 (19) (2014)
  28. Bičiūnas A, Arlauskas A et al 116 (9) (2014)
  29. Zhu L, Liu Yu et al Nanoscale Res Lett 9 (1) (2014)
  30. Arlauskas A, Treu Ju et al Nano Lett. 14 1508 (2014)
  31. Zhuravlev A G, Savchenko M L et al Jetp Lett. 98 455 (2013)
  32. Exarhos A L, Turk M E, Kikkawa Ja M Nano Lett. 13 344 (2013)
  33. Malevich V L, Ziaziulia P A et al 112 (7) (2012)
  34. Ziaziulia P A, Malevich V L et al Semiconductors 46 143 (2012)
  35. Young E S K, Akimov A V et al Phys. Rev. B 86 (15) (2012)
  36. Okuyama R, Eto M, Hyuga H Phys. Rev. B 83 (19) (2011)
  37. Peng X Y, Zhang Q et al Phys. Rev. B 84 (7) (2011)
  38. Danilchenko B A, Budnyk A P et al Solar Energy Materials And Solar Cells 95 2551 (2011)
  39. Gulyaev Yu V, Zilberman P E et al Uspekhi Fizicheskikh Nauk 179 359 (2009)
  40. Sapega V F, Sablina N I et al Phys. Rev. B 80 (4) (2009)
  41. Sapega V F Semicond. Sci. Technol. 23 114016 (2008)
  42. Bakin V V, Pakhnevich A A et al E-J. Surf. Sci. Nanotechnol. 5 80 (2007)
  43. Cam H N J. Exp. Theor. Phys. 102 277 (2006)
  44. Nemec P, Kerachian Y et al Phys. Rev. B 72 (24) (2005)
  45. Gulyaev Yu V, Zil’berman P E et al J. Exp. Theor. Phys. 100 1005 (2005)
  46. Davydov V Yu, Klochikhin A A Semiconductors 38 861 (2004)
  47. Morgunov R B Uspekhi Fizicheskikh Nauk 174 131 (2004)
  48. Ryvkin B S, Avrutin E A, Pessa M 93 2353 (2003)
  49. Haug H Spectroscopy of Systems with Spatially Confined Structures Chapter 7 (2003) p. 261
  50. Khalid M N, Hughes H P Semicond. Sci. Technol. 18 342 (2003)
  51. Hilton D J, Tang C L Phys. Rev. Lett. 89 (14) (2002)
  52. Kainth D S, Khalid M N, Hughes H P Physica E: Low-dimensional Systems And Nanostructures 13 337 (2002)
  53. Kainth D S, Khalid M N, Hughes H P Solid State Communications 122 351 (2002)
  54. Hilton D J, Tang C L Nonlinear Optics: Materials, Fundamentals and Applications, (2002) p. ThB5
  55. Lin S D, Lee H C et al Journal Of Luminescence 94-95 761 (2001)
  56. Sapega V F, Mirlin D N et al Semiconductors 35 447 (2001)
  57. Haug H Landolt-Börnstein - Group III Condensed Matter Vol. Optical Properties. Part 11.4 References for 134C1 Chapter 6 (2001) p. 49
  58. Akimov I A, Sapega V F et al Physica E: Low-dimensional Systems And Nanostructures 10 505 (2001)
  59. Varnavski O, Ispasoiu R G et al 114 1962 (2001)
  60. Haug H Landolt-Börnstein - Group III Condensed Matter Vol. Optical Properties. Part 11.2 Theory of stationary spectroscopy34C1 Chapter 4 (2001) p. 21
  61. Sun K W, Wang C M et al Journal Of Luminescence 92 145 (2000)
  62. Král P, Sipe J E Phys. Rev. B 61 5381 (2000)
  63. Orlov D A, Andreev V É, Terekhov A S Jetp Lett. 71 151 (2000)
  64. Sun K W, Sun C -K et al Solid State Communications 115 329 (2000)
  65. Sun K W, Chang H Y et al Solid State Communications 115 563 (2000)
  66. Sun K W, Song T S et al Phys. Rev. B 61 15592 (2000)
  67. Kompan M E, Shabanov I Yu, Zhilyaev Yu V Phys. Solid State 42 1041 (2000)
  68. Sun K W, Chang H Y et al Nanotechnology 11 227 (2000)
  69. Rasulov R Ya, Salenko Yu E et al Semiconductors 33 45 (1999)
  70. Viña L J. Phys.: Condens. Matter 11 5929 (1999)
  71. Akimov I A, Sapega V F et al Semiconductors 33 1124 (1999)
  72. Edelstein V M Phys. Rev. Lett. 80 5766 (1998)
  73. Mirlin D N, Perel’ V I, Reshina I I Semiconductors 32 770 (1998)
  74. Saxena V, Evans J P, Hughes H P Physica E: Low-dimensional Systems And Nanostructures 2 478 (1998)
  75. Sapega V F, Perel V I et al Phys. Stat. Sol. (b) 204 141 (1997)
  76. Binder R, Köhler H S et al Phys. Rev. B 55 5110 (1997)
  77. Malyshev A V, Merkulov I A, Rodina A V Phys. Rev. B 55 4388 (1997)
  78. El S K, Stanton C J Phys. Rev. B 55 9671 (1997)
  79. Kovalev D, Ben-Chorin M et al Phys. Rev. Lett. 79 119 (1997)
  80. Požela J, Jucienė V et al 82 5564 (1997)
  81. Reshina I I, Mirlin D N et al Phys. Stat. Sol. (b) 204 181 (1997)
  82. Finley J J, Teissier R J et al Phys. Stat. Sol. (b) 204 215 (1997)
  83. Sapega V F, Perel’ V I et al Phys. Rev. B 56 6871 (1997)
  84. Reshina I I, Mirlin D N et al Solid State Communications 103 151 (1997)
  85. Evans J P, Saxena V, Hughes H P Phys. Stat. Sol. (b) 204 125 (1997)
  86. Cockburn J W, Finley J J et al Phys. Rev. B 54 4472 (1996)
  87. Polisski G, Andrianov A V et al Thin Solid Films 276 235 (1996)
  88. Petrov M V, Parihar S R, Lyon S A Phys. Rev. B 54 13868 (1996)
  89. Koyama H, Koshida N Phys. Rev. B 52 2649 (1995)
  90. Teissier R, Finley J J et al Phys. Rev. B 51 5562 (1995)
  91. Sapega V F, Chamberlain M P et al Phys. Rev. B 52 14144 (1995)
  92. Edelstein V M J. Phys.: Condens. Matter 7 1 (1995)
  93. Kash J A Ultrafast Electronics and Optoelectronics, (1995) p. UMB3
  94. Kash J A Phys. Rev. B 51 4680 (1995)
  95. Sun K W, Kane M G, Lyon S A Europhys. Lett. 26 123 (1994)
  96. Hackenberg W, Hughes H P Semicond. Sci. Technol. 9 686 (1994)
  97. Hembree C E, Mason B A et al Phys. Rev. B 50 15197 (1994)
  98. Hayden R K, Eaves L et al Semicond. Sci. Technol. 9 298 (1994)
  99. Kash J A, Zachau M et al Semicond. Sci. Technol. 9 681 (1994)
  100. Kane M G, Sun K W, Lyon S A Phys. Rev. B 50 7428 (1994)
  101. Kash J A, Zachau M et al Surface Science 305 251 (1994)
  102. Kane M G, Sun K W, Lyon S A Semicond. Sci. Technol. 9 697 (1994)
  103. Shah Ja, Kim D-S NATO ASI Series Vol. Coherent Optical Interactions in SemiconductorsInvestigation of Free-Carrier Scattering in Semiconductors Using Coherent Spectroscopy330 Chapter 6 (1994) p. 137
  104. Hackenberg W, Hughes H P Phys. Rev. B 49 7990 (1994)
  105. Deveaud B Optical Properties of Semiconductors Chapter 5 (1993) p. 119
  106. Yang C -C IEEE J. Quantum Electron. 29 1091 (1993)
  107. Foing J -P, Joffre M et al J. Opt. Soc. Am. B 10 1143 (1993)
  108. Lowry C W, Brown de Colstoun F et al Phys. Rev. Lett. 71 1534 (1993)
  109. Kash J A Phys. Rev. B 48 18336 (1993)
  110. Kash J A Phys. Rev. B 47 1221 (1993)
  111. Scholz R, Pfeifer T, Kurz H Phys. Rev. B 47 16229 (1993)
  112. Portella M T, Bigot J -Y et al 60 2123 (1992)
  113. Kash J A, Zachau M et al Phys. Rev. Lett. 69 2260 (1992)
  114. MIRLIN D N, PEREL’ V I Spectroscopy of Nonequilibrium Electrons and Phonons (1992) p. 269
  115. Mestres N, Cerdeira F et al 71 5619 (1992)
  116. Stanton C J, Bailey D W Phys. Rev. B 45 8369 (1992)
  117. Guncer S E, Ferry D K Semicond. Sci. Technol. 7 B324 (1992)
  118. Hackenberg W, Fasol G, Kano H Semicond. Sci. Technol. 7 B26 (1992)
  119. Aoyagi H, Horinaka H et al Physics Letters A 167 415 (1992)
  120. Mirlin D N, Perel’ V I Semicond. Sci. Technol. 7 1221 (1992)
  121. Lyon S A, Petersen C L Semicond. Sci. Technol. 7 B21 (1992)
  122. HERMANN C, DROUHIN H -J et al Spectroscopy of Nonequilibrium Electrons and Phonons (1992) p. 397
  123. Litovchenko V G, Bercha A I et al Thin Solid Films 217 62 (1992)
  124. Drouhin H -J, Peretti J Phys. Rev. B 44 7993 (1991)
  125. Stanton C J, Bailey D W Monte Carlo Device Simulation Chapter 3 (1991) p. 67
  126. Zachau M, Kash J A, Masselink W T Phys. Rev. B 44 4048 (1991)
  127. Pikus G E, Titkov A N The Hanle Effect and Level-Crossing Spectroscopy Chapter 6 (1991) p. 283
  128. Ridley B K Rep. Prog. Phys. 54 169 (1991)
  129. Kash J A, Tsang J C Topics In Applied Physics Vol. Light Scattering in Solids VILight scattering and other secondary emission studies of dynamic processes in semiconductors68 Chapter 8 (1991) p. 423
  130. Sun Y S, Stanton C J Phys. Rev. B 43 2285 (1991)
  131. Iikawa F, Ruf T, Cardona M Phys. Rev. B 43 4849 (1991)
  132. Zakharchenya B P, Kop’ev P S et al Laser Optics of Condensed Matter Chapter 37 (1991) p. 259
  133. Quantum Semiconductor Structures (1991) p. 217
  134. Merkulov I A, Perel V I, Portnoi M E Superlattices And Microstructures 10 371 (1991)
  135. Ozeki Y, Johnson J E, Tang C L 58 1958 (1991)
  136. Hackenberg W, Fasol G 57 174 (1990)
  137. Portella M T, Bigot J -Y et al Springer Series In Chemical Physics Vol. Ultrafast Phenomena VIIk-Space Carrier Dynamics in GaAs53 Chapter 86 (1990) p. 285
  138. Ipatova I P, Voitenko V A Physics Reports 194 361 (1990)
  139. Alekseev M A, Mirlin D N Phys. Rev. Lett. 65 274 (1990)
  140. Mirlin D N Physics Reports 194 291 (1990)
  141. Shmelev G M, Kryuchkov S V, Tsurkan G I Physica Status Solidi (b) 161 (2) (1990)
  142. Petersen C L, Lyon S A Phys. Rev. Lett. 65 760 (1990)
  143. Fasol G, Hackenberg W et al Phys. Rev. B 41 1461 (1990)
  144. Portella M T, Bigot J -Y et al Ultrafast Phenomena, (1990) p. WA5
  145. Petersen C L, Frei M R, Lyon S A Solid-State Electronics 32 1919 (1989)
  146. Kogan Sh M, Polupanov A F Electrochimica Acta 34 57 (1989)
  147. Zakharchenya B P, Kop’ev P S et al Solid State Communications 69 203 (1989)
  148. Drouhin H -J, Paget D, Peretti J Surface Science 211-212 593 (1989)
  149. Anh V H, Shon N H Physica Status Solidi (b) 154 661 (1989)
  150. Hackenberg W, Fasol G Solid-State Electronics 32 1247 (1989)
  151. Kash J A, Ulbrich R G, Tsang J C Solid-State Electronics 32 1277 (1989)
  152. Petersen C L, Frei M R, Lyon S A Phys. Rev. Lett. 63 2849 (1989)
  153. Oudar J L Springer Proceedings In Physics Vol. Nonlinear Optics of Organics and SemiconductorsUltrafast Dynamical Nonlinearities in Epitaxial III–V Structures36 Chapter 5 (1989) p. 38
  154. Mirlin D N, Zakharchenya B P Laser Optics of Condensed Matter Chapter 4 (1988) p. 19
  155. Alekseev M A, Karlik I Ya et al Physics Letters A 127 373 (1988)
  156. Riechert H, Drouhin H -J, Hermann C Phys. Rev. B 38 4136 (1988)
  157. Lisitsa M P, Valakh M Ya, Litvinchuk A P Journal Of Luminescence 40-41 607 (1988)
  158. Canright G S, Mahan G D Phys. Rev. B 36 1025 (1987)
  159. Mirlin D N, Sapega V F et al Solid State Communications 61 799 (1987)
  160. Esipov S E, Levinson Y B Advances In Physics 36 331 (1987)
  161. Weisbuch C Semiconductors And Semimetals Vol. Applications of Multiquantum Wells, Selective Doping, and SuperlatticesChapter 1 Fundamental Properties of III-V Semiconductor Two-Dimensional Quantized Structures: The Basis for Optical and Electronic Device Applications24 (1987) p. 1
  162. Modern Problems In Condensed Matter Sciences Vol. Carrier Scattering in Metals and SemiconductorsReferences19 (1987) p. 429
  163. Kauschke W, Mestres N, Cardona M Phys. Rev. B 35 3843 (1987)
  164. Lyon S A Journal Of Luminescence 35 121 (1986)
  165. Charfi F F, Zouaghi M et al Phys. Rev. B 33 5623 (1986)
  166. Tang C L Springer Proceedings In Physics Vol. Nonlinear Optics: Materials and DevicesFemtosecond Lasers and Ultrafast Processes in Semiconductors7 Chapter 4 (1986) p. 80
  167. Maaref M, Charfi F F et al Phys. Rev. B 34 8650 (1986)
  168. Oudar J L Springer Proceedings In Physics Vol. Nonlinear Optics: Materials and DevicesTransient Nonlinear Optical Effects in Semiconductors7 Chapter 5 (1986) p. 91
  169. Fasol G, Hughes H P Phys. Rev. B 33 2953 (1986)
  170. Bhattacharjee A K Phys. Rev. B 34 8550 (1986)
  171. Drouhin H -J, Hermann C, Lampel G Phys. Rev. B 31 3859 (1985)
  172. Oudar J L, Abram I et al Journal Of Luminescence 30 340 (1985)
  173. Hermann C, Lampel G, Safarov V I Ann. Phys. Fr. 10 1117 (1985)
  174. Drouhin H -J, Hermann C, Lampel G Phys. Rev. B 31 3872 (1985)
  175. OUDAR J L, ABRAM I et al High Excitation and Short Pulse Phenomena (1985) p. 340
  176. Mirlin D N, Karlik I Ya Journal Of Molecular Structure 115 141 (1984)
  177. Shmelev G M, Shon N H, Tsurkan G I Physica Status Solidi (b) 126 (1) (1984)
  178. Oudar J L, Migus A et al Phys. Rev. Lett. 53 384 (1984)
  179. Erskine D J, Taylor A J, Tang C L 45 1209 (1984)
  180. HERMANN Claudine, WEISBUCH Claude Modern Problems In Condensed Matter Sciences Vol. Optical OrientationOptical Detection of Conduction Electron Spin Resonance in Semiconductors and its Application to k · p Perturbation Theory8 (1984) p. 463
  181. DYAKONOV M I, PEREL V I Modern Problems In Condensed Matter Sciences Vol. Optical OrientationTheory of Optical Spin Orientation of Electrons and Nuclei in Semiconductors8 (1984) p. 11
  182. MIRLIN D N Modern Problems In Condensed Matter Sciences Vol. Optical OrientationOptical Alignment of Electron Momenta in GaAs-Type Semiconductors8 (1984) p. 133
  183. Efanov A V, Entin M V Physica Status Solidi (b) 119 473 (1983)
  184. Efanov A V, Entin M V Physica Status Solidi (b) 118 63 (1983)
  185. Ya V M, Litvinchuk, Tarasov G G Physica Status Solidi (b) 116 (2) (1983)
  186. Shmelev G M, Tsurkan G I, Schon N H Physica Status Solidi (b) 114 (1) (1982)
© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions