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1981

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March

  

Reviews of topical problems


Edge luminescence of direct-gap semiconductors

,  a
a Institute of Electrophysics, Ural Branch of the Russian Academy of Sciences, ul. Amundsena 106, Ekaterinburg, 620016, Russian Federation
PACS: 78.55.Hx, 78.60.Fi, 71.55.Ht, 71.25.Tn (all)
DOI: 10.1070/PU1981v024n03ABEH004770
URL: https://ufn.ru/en/articles/1981/3/b/
Citation: Levanyuk A P, Osipov V V "Edge luminescence of direct-gap semiconductors" Sov. Phys. Usp. 24 187–215 (1981)
BibTex BibNote ® (generic)BibNote ® (RIS)MedlineRefWorks
%0 Journal Article
%T Edge luminescence of direct-gap semiconductors
%A A. P. Levanyuk
%A V. V. Osipov
%I Physics-Uspekhi
%D 1981
%J Phys. Usp.
%V 24
%N 3
%P 187-215
%U https://ufn.ru/en/articles/1981/3/b/
%U https://doi.org/10.1070/PU1981v024n03ABEH004770

Оригинал: Леванюк А П, Осипов В В «Краевая люминесценция прямозонных полупроводников» УФН 133 427–477 (1981); DOI: 10.3367/UFNr.0133.198103b.0427

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