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1981

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March

  

Reviews of topical problems


Edge luminescence of direct-gap semiconductors

,  a
a Institute of Electrophysics, Ural Branch of the Russian Academy of Sciences, ul. Amundsena 106, Ekaterinburg, 620016, Russian Federation
PACS: 78.55.Hx, 78.60.Fi, 71.55.Ht, 71.25.Tn (all)
DOI: 10.1070/PU1981v024n03ABEH004770
URL: https://ufn.ru/en/articles/1981/3/b/
Citation: Levanyuk A P, Osipov V V "Edge luminescence of direct-gap semiconductors" Sov. Phys. Usp. 24 187–215 (1981)
BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks
PT Journal Article
TI Edge luminescence of direct-gap semiconductors
AU Levanyuk A P
FAU Levanyuk AP
AU Osipov V V
FAU Osipov VV
DP 10 Mar, 1981
TA Phys. Usp.
VI 24
IP 3
PG 187-215
RX 10.1070/PU1981v024n03ABEH004770
URL https://ufn.ru/en/articles/1981/3/b/
SO Phys. Usp. 1981 Mar 10;24(3):187-215

Оригинал: Леванюк А П, Осипов В В «Краевая люминесценция прямозонных полупроводников» УФН 133 427–477 (1981); DOI: 10.3367/UFNr.0133.198103b.0427

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