Reviews of topical problems

Semiconductor-metal phase transition in rare-earth semiconductors (samarium monochalcogenides)

A review is given of the theoretical and experimental data on the isostructural first-order semiconductor-metal phase transition in samarium monosulfides and Sm$_{1-x}$Ln$_x^{3+}$S solid solutions (Ln is a rare-earth metal). Phase transitions occurring under hydrostatic pressures and as a result of change in temperature are considered. Electrical, magnetic, galvanomagnetic, thermoelectric, thermal, optical and mechanical properties are discussed, as well as the energy band structure of the semiconductor and metal modifications of the investigated materials. Special attention is given to the experiments confirming the fractional valence of the samarium ion in the metal phase of these materials (the experimental evidence for this valence is provided by the M\"ossbauer effect, magnetic susceptibility, shifts of x-ray $K$ lines, x-ray emission spectra, and specific heat).

PACS: 72.60.+g, 71.25.Tn, 72.20.−i, 78.70.En (all)
DOI: 10.1070/PU1978v021n02ABEH005517
Citation: Smirnov I A, Oskotskii V S "Semiconductor-metal phase transition in rare-earth semiconductors (samarium monochalcogenides)" Sov. Phys. Usp. 21 117–140 (1978)
BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks
PT Journal Article
TI Semiconductor-metal phase transition in rare-earth semiconductors (samarium monochalcogenides)
AU Smirnov I A
FAU Smirnov IA
AU Oskotskii V S
FAU Oskotskii VS
DP 10 Feb, 1978
TA Phys. Usp.
VI 21
IP 2
PG 117-140
RX 10.1070/PU1978v021n02ABEH005517
SO Phys. Usp. 1978 Feb 10;21(2):117-140

Оригинал: Смирнов И А, Оскотский В С «Фазовый переход полупроводник — металл в редкоземельных полупроводниках (монохалькогениды самария)» УФН 124 241–279 (1978); DOI: 10.3367/UFNr.0124.197802b.0241

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