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42.72.Bj, 81.10.−h, 85.60.Dw (all)
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H. Amano “Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation” 59 (5) (2016)
42.72.Bj, 81.10.−h, 85.60.Dw (all)
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Sh. Nakamura “Background story of the invention of efficient blue InGaN light emitting diodes” 59 (5) (2016)
42.72.Bj, 81.10.−h, 85.60.Dw (all)
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A.G. Vitukhnovsky “Organic photonics: achievements and disappointments” 56 623–627 (2013)
42.70.Jk, 85.60.Dw, 85.60.Pg (all)
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I.I. Taubkin “Photoinduced and thermal noise in semiconductor p-n junctions” 49 1289–1306 (2006)
72.70.+m, 85.30.−z, 85.60.Dw (all)
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M.V. Alfimov, B.M. Bolotovskii et al “Special meeting of the Presidium of the Russian Academy of Sciences, the Bureau of the General Physics and Astronomy Division, RAS and the Scientific Council of the P N Lebedev Physics Institute, RAS on the occasion of the 110th anniversary of the birth of Sergei Ivanovich Vavilov, and XXV Jubilee Vavilov Reading (28 March 2001)” 44 1017–1036 (2001)
01.10.Fv, 42.70.Jk, 78.55.−m, 81.07.Nb, 01.60.+q (all)
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M.V. Alfimov “Luminescence of guest-host type organic nanostructures” 44 1018–1020 (2001)
42.70.Jk, 78.55.−m, 81.07.Nb (all)
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79.60.Jv, 79.70.+q, 85.45.−w, 85.60.Pg (all)
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43.28.Py, 43.38.Kb, 43.66.Lj, 85.60.Jb, 85.60.Dw (all)
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Zh.I. Alferov “Semiconductor Devices with Heterojunctions” 15 834–835 (1973)
73.40.Kp, 85.30.−z, 85.60.Dw (all)
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A.A. Groshev, V.B. Sergeev “Liquid crystals in display devices” 15 515–516 (1973)
85.60.Pg, 42.79.Kr (all)
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V.V. Fadeev “Ultraviolet Lasers Using Organic Scintillators” 13 409–410 (1970)
42.55.Ks, 42.55.Rz, 42.70.Mp, 42.70.Hj, 42.70.Jk, 42.72.Bj (all)
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L.D. Derkacheva, G.V. Peregudov, A.I. Sokolovskaya “Rare-earth chelate lasers” 10 91–99 (1967)
42.55.−f, 42.60.Jf, 42.70.Hj, 42.70.Jk (all)
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