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Краевая люминесценция прямозонных полупроводников

,  а
а Институт электрофизики УрО РАН, ул. Амундсена 106, Екатеринбург, 620016, Российская Федерация

Введение. Люминесценция слабо легированных полупроводников. Вероятности спонтанных излучательных переходов. Экситонная люминесценция. Межзонная излучательная рекомбинация. Примесная излучательная рекомбинация. Межпримесная (донорно- акцепторная) рекомбинация. О роли различных каналов излучательной рекомбинации. Люминесценция сильно легированных полупроводников. Энергетический спектр СЛП. Основные каналы излучательной рекомбинации. «Межзонная» излучательная рекомбинация в СЛП. Примесная излучательная рекомбинация в СЛП. Межпримесная излучательная рекомбинация в СЛП. Краевая люминесценция сильно компенсированных СЛП (СЛКП). Переходные характеристики люминесценции. Заключение. Цитированная литература.

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PACS: 78.55.Hx, 78.60.Fi, 71.55.Ht, 71.25.Tn (все)
DOI: 10.3367/UFNr.0133.198103b.0427
URL: https://ufn.ru/ru/articles/1981/3/b/
Цитата: Леванюк А П, Осипов В В "Краевая люминесценция прямозонных полупроводников" УФН 133 427–477 (1981)
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English citation: Levanyuk A P, Osipov V V “Edge luminescence of direct-gap semiconductorsSov. Phys. Usp. 24 187–215 (1981); DOI: 10.1070/PU1981v024n03ABEH004770

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