Maksim Vladimirovich Budantsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation
Phone: +7 (383) 333 27 66
Fax: +7 (383) 333 27 71
Website: www.isp.nsc.ru
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Articles
- M.V. Budantsev, Z.D. Kvon, W.V. Pogosov, J.C. Portal “Order, disorder and chaos in 2D lattice of coupled Sinai billiards” Phys. Usp. 44 20–24 (2001)
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See also:
Z.D. Kvon,
J.C. Portal,
W.V. Pogosov
PACS: 72.15.-v, 72.15.Rn, 05.60.Gg, 05.45.Mt
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