Issue 11, 2024

Hiroshi Amano

Nagoya University
Address: Nagoya, Japan
Phone: +81 (052) 741 21 11
Website: www.nagoya-u.ac.jp

Articles

H. Amano “Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation” Phys. Usp. 59 (5) (2016)

PACS: 42.72.Bj, 81.10.-h, 85.60.Dw

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