Hiroshi Amano



Nagoya University
Address: Nagoya, Japan
Phone: +81 (052) 741 21 11
Website:


Articles

1 H. Amano “Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiationPhys. Usp. 59 (5) (2016)

PACS: 42.72.Bj, 81.10.-h, 85.60.Dw

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