E.G. Batyev



Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation


Articles

  1. E.G. Batyev “Pauli paramagnetism and Landau diamagnetismPhys. Usp. 52 1245–1246 (2009)

Signed personalia

  1. A.L. Aseev, E.G. Batyev, V.S. L’vov et alIn memory of Viktor Iosifovich BelinicherPhys. Usp. 45 101–102 (2002)

See also: A.F. Andreev, V.L. Ginzburg, L.V. Keldysh, A.N. Skrinskii, G.A. Mesyats, L.P. Pitaevskii, E.P. Velikhov, A.M. Prokhorov, V.A. Matveev, V.A. Rubakov, B.B. Kadomtsev, A.S. Borovik-Romanov, Zh.I. Alferov, E.L. Feinberg, V.E. Fortov

PACS: 75.20.-g, 01.60.+q

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