K.V. Reich Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
Arrays of quantum-dots (QD), i.e. semiconductor nanoparticles with typical sizes of 3-10 nm, are not only just an object of scientific research but are used in electronic devices. Usually, the interest to quantum dots is due to their optical properties, which depends on the size of QD. The review considers the electronic properties of such arrays. In many cases, these properties inherit the properties of bulk semiconductors, but in some cases, significantly differ due to the discreteness of sizes and specific disorder in the array: the difference in size and spacing between QD, as well as the number of donors. In particular, the metal-dielectric transition in such arrays occurs at a much higher concentration of donors than in the bulk material. The nature of the hopping conductivity in the dielectric phase significantly depends on the type of disorder, quantum confinement effects, the Coulomb blockade, the overlap integral between QDs.