Accepted articles

On the 100th anniversary of the Ioffe Institute of the Russian Academy of Sciences


Spintronics of semiconductor, metallic, dielectric, and hybrid structures

 a,  a,  a,  a,  a,  a,  a,  a, b,  a, b,  a, b,  a, b
a Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
b Experimentelle Physik II, Universität Dortmund, Otto-Hahn-Straße 4, Dortmund, D-44227, Germany

Demands for miniaturization, increase of operation speed, and energy efficiency of electronic devices have led to emergence and rapid development of spin electronics, or spintronics. This review discusses several areas in experimental and theoretical research in which scientists of the Ioffe Institute made substantial contributions. Not restricting the review solely with works carried out at Ioffe Institute, we discuss the progress in tailoring magnetic properties of semiconducting and hybrid structures; development of methods for single spin manipulation; theoretical description of electric field induced switching of metallic heterostructures; and ultrafast control of magnetization via changing magnetic anisotropy by femtosecond laser pulses.

Text is available here.

Keywords: spin polarization, spin transport, ferromagnetic proximity effect, optically detected magnetic resonance, laser-induced ultrafast magnetization dynamics, single spins, spin-orientation transitions, magnetic anisotropy, diluted magnetic semiconductors, ferromagnets, ferrimagnets
PACS: 85.75.−d, 75.76.+j, 75.78.Jp, 78.30.Fs, 78.55.Et, 76.70.Hb, 75.30.Kz, 75.50.Bb, 75.50.Gg (all)
DOI: 10.3367/UFNe.2018.11.038486
Citation: Baranov P G, Kalashnikova A M, Kozub V I, Korenev V L, Kusrayev Yu G, Pisarev R V, Sapega V F, Akimov I A, Bayer M, Scherbakov A V, Yakovlev D R "Spintronics of semiconductor, metallic, dielectric, and hybrid structures" Phys. Usp., accepted

Received: 7th, September 2018, revised: 19th, September 2018, 22nd, November 2018

Оригинал: Баранов П Г, Калашникова А М, Козуб В И, Коренев В Л, Кусраев Ю Г, Писарев Р В, Сапега В Ф, Акимов И А, Байер М, Щербаков А В, Яковлев Д Р «Спинтроника полупроводниковых, металлических, диэлектрических и гибридных структур» УФН, принята к публикации; DOI: 10.3367/UFNr.2018.11.038486

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