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Electromagnetic analogue of a first-type leaky surface elastic wave for the single interface between transparent dielectric media

 a, b,  c,  b
a Moscow Institute of Physics and Technology (State University), Institutskii per. 9, Dolgoprudnyi, Moscow Region, 141700, Russian Federation
b Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 11, kor. 7, Moscow, 125009, Russian Federation
c A.A. Galkin Donetsk Physical-Technical Institute, ul. R. Lyuksemburg 72, Donetsk, 340114, Ukraine

Under conditions of total internal reflection of a TM- (TE-) type of the plane vol-ume electromagnetic wave from the surface of a semi-infinite, transparent aniso-tropic dielectric medium, a special type of the fast improper surface wave can be formed (exceptional surface wave). For these type of wave the instantaneous flow of energy through the interface is zero. In this case, the reflection of a quasi-plane (or quasi-monochromatic) wave of the corresponding polarization leads to the exci-tation of the leaky surface wave and to the maximum of the resonant amplification of the Goos—Hänchen effect (or the Wigner delay effect).

Typically, an English fulltext is available in about 3 months from the date of publication of the original article.

Keywords: evanescent wave, total internal reflection, bianisotropic medium, antiferromagnet, Goos—Hänchen shift, Wigner delay, leaky surface wave, multilayered structure
PACS: 42.25.−p, 42.25.Bs, 42.25.Gy, 42.25.Hz, 43.20.Gp (all)
DOI: 10.3367/UFNe.2019.08.038645
URL: https://ufn.ru/en/articles/2020/9/b/
Citation: Gulyaev Yu V, Tarasenko S V, Shavrov V G "Electromagnetic analogue of a first-type leaky surface elastic wave for the single interface between transparent dielectric media" Phys. Usp. 63 (9) (2020)

Received: 17th, May 2019, revised: 12th, August 2019, 14th, August 2019

Оригинал: Гуляев Ю В, Тарасенко С В, Шавров В Г «Электромагнитный аналог вытекающей поверхностной упругой волны первого типа для уединённой границы раздела прозрачных диэлектриков» УФН 190 933–949 (2020); DOI: 10.3367/UFNr.2019.08.038645

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