Electronic states in quasi-two-dimensional (2D) metal and semiconductor crystals can have unusual characteristics and thus can exhibit unusual electronic and optical phenomena. In this paper, the results recently obtained for a new class of 2D compounds, transition metal dichalcogenides, are presented, including those on structure, preparation methods, electronic, mechanical and optical properties, defects and their influence on material properties, and conditions facilitating the formation of defects. The paper considers the unique properties of mono- and multilayer materials, examines their dependence on external factors, and discusses their further application prospects. Various applications of 2D transition metal dichalcogenides are described, ranging from nanolubricants, nanocomposites and biosensors to memory cells and supercapacitors to optoelectronic, spin and photovoltaic devices.

Keywords: two-dimensional structures, transition metal dichalcogenides, electronic and optical properties, spin polarization, valeytronics, heterostructures, defects PACS: 73.22.−f DOI: 10.3367/UFNe.2017.02.038065 URL: https://ufn.ru/en/articles/2018/1/b/ 000429883000001 2-s2.0-85045727322 2018PhyU...61....2C Citation: Chernozatonskii L A, Artyukh A A "Quasi-two-dimensional transition metal dichalcogenides: structure, synthesis, properties and applications" Phys. Usp. 61 2–28 (2018) BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks Received: 19th, December 2016, revised: 5th, February 2017, accepted: 7th, February 2017 Оригинал: Чернозатонский Л А, Артюх А А «Квазидвумерные дихалькогениды переходных металлов: структура, синтез, свойства и применение» УФН 188 3–30 (2018); DOI: 10.3367/UFNr.2017.02.038065