Background story of the invention of efficient blue InGaN light emitting diodes
Sh. Nakamura University of California, Santa Barbara, CA, USA
Nobel lecture, Decemver 8, 2014
PACS:42.72.Bj, 81.10.−h, 85.60.Dw (all) URL: https://ufn.ru/en/articles/2016/5/m/ Citation: Nakamura Sh "Background story of the invention of efficient blue InGaN light emitting diodes" Phys. Usp.59 (5) (2016)
Received: 2nd, December 2015, accepted: 8th, December 2014
Nakamura S, Mukai T, Senoh M, Iwasa N "Thermal annealing effects on p-type Mg-doped GaN films" Jpn. J. Appl. Phys.31 L139 (1992)
Nakamura S, Mukai T, Senoh M "High-power GaN p-n junction blue-light-emitting diodes" Jpn. J. Appl. Phys.30 L1998 (1991)
"MIS type blue LEDs with a brightness of 200 mcd were developed by Toyoda Gosei" October 20, 1993, Nikkan Kogyo Shinbun, Japanese Newspaper Press Release
"p - n junction DH Blue LEDs with a brightness of more than 1000mcd were developed by Nichia Chemical Industries Ltd." November 30th, 1993, Nikkei Sangyo Shinbun, Japanese News-paper Press Release
Nakamura S, Senoh M, Iwasa N, Nagahama S-I "High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures" Jpn. J. Appl. Phys.34 L797 (1995)
Nakamura S, Senoh M, Iwasa N, Nagahama S -I, Yamada T, Mukai T "Superbright green InGaN single-quantum-well-structure light-emitting diodes" Jpn. J. Appl. Phys.34 L1332 (1995)
Bando K, Noguchi Y, Sakamoto K, Shimizu Y "Development and application of high-brightness white LEDs" Technical Digest. Phosphor Research Society, 264th Meeting, November 29, 1996, in Japanese
Nakamura D, Senoh M, Nagahama S-I, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y "InGaN-based multi-quantum-well-structure laser diodes" Jpn. J. Appl. Phys.35 L74 (1996)