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Nobel lectures in physics


Fascinated journeys into blue light

 a, b
a Meijo University, 1-501 Shiogama-guchi, Nagoya, Tempaku-ku, 468-8502, Japan
b Nagoya University Akasaki Research Center, Furo-cho, Nagoya, Chikusa-ku, 464-8601, Japan

Nobel lecture, December 8, 2014

PACS: 42.72.Bj, 81.10.−h, 85.60.Dw (all)
URL: https://ufn.ru/en/articles/2016/5/k/
Citation: Akasaki I "Fascinated journeys into blue light" Phys. Usp. 59 (5) (2016)

Received: 2nd, December 2015, 8th, December 2014

Оригинал: Акасаки И «Увлекательные приключения в поисках синего света» УФН 186 504–517 (2016); DOI: 10.3367/UFNr.2014.12.037725

References (67) ↓ Similar articles (20)

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  2. Amano H, Kito M, Hiramatsu K, Akasaki I "P-Type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)" Jpn. J. Appl. Phys. 28 L2112 (1989)
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  4. Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y "InGaN-based multi-quantum-well-structure laser diodes" Jpn. J. Appl. Phys. 35 L74 (1996)
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  22. Akasaki I, Amano H, Koide Y, Hiramatsu K, Sawaki N "Effects of AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1-xAlxN (0 < x ≤ 0.4) films grown on sapphire substrate by MOVPE" J. Cryst. Growth 98 209 (1989)
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  27. Amano H, Akasaki I, Kozawa T, Hiramatsu K, Sawaki N, Ikeda K, Ishii Y "Electron beam effects on blue luminescence of zinc-doped GaN" J. Luminescence 40-41 121 (1988)
  28. Phillips J C Bonds And Bands In Semiconductors (New York: Academic Press, 1973)
  29. Akasaki I, Amano H, Kito M, Hiramatsu K, Sawaki N "Pure-blue electro-luminescence from Mg-doped GaN grown by MOVPE" Electrochemical Society 175th Meeting, SOTAPOCS-X, 673-SOA (Pennington, NJ: The Electrochemical Society, 1989)
  30. Amano H, Kitoh M, Hiramatsu K, Akasaki I "Growth and luminescence properties of Mg-doped GaN prepared by MOVPE" J. Electrochem. Soc. 137 1639 (1990)
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  35. Van Vechten J A, Horning J D, Goldenberg B "Defeating compensation in wide gap semiconductors by growing in H that is removed by low temperature de-ionizing radiation" Jpn. J. Appl. Phys. 31 3662 (1992)
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  37. Akasaki I, Amano H "Conductivity Control of AlGaN, fabrication of AlGaN/GaN multi-heterostructure and their application to UV/blue light emitting devices" MRS Symp. Proc. 242 383 (1992), Symposium held December 2 ± 6, 1991, Boston
  38. Yamasaki S, Asami S, Shibata N, Koike M, Manabe K, Tanaka T, Amano H, Akasaki I "p-type conduction in Mg-doped Ga0.91In0.09N grown by metalorganic vapor-phase epitaxy" Appl. Phys. Lett. 66 1112 (1995)
  39. Murakami H, Asahi T, Amano H, Hiramatsu K, Sawaki N, Akasaki I "Growth of Si-doped AlxGa1-xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy" J. Cryst. Growth 115 648 (1991)
  40. Akasaki I, Amano H, Itoh K, Koide N, Manabe K "GaN-based UV/blue light emitting devices" IOP Conf. Ser. 129 851 (1992)
  41. Nakamura S, Mukai T, Senoh M "Candelaclass highbrightness InGaN/AlGaN double heterostructure blue light emitting diodes" Appl. Phys. Lett. 64 1687 (1994)
  42. Akasaki I, Amano H "Room temperature ultraviolet/blue light emitting devices based on AlGaN/GaN multi-layered structure" Extended Abstract, 24th Intern. Conf. Solid State Devices and Materials (1992) p. 327
  43. Akasaki I, Amano H "Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters" Jpn. J. Appl. Phys. 36 5393 (1997)
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  45. Yoshimoto N, Matsuoka T, Sasaki T, Katsumi A "Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy" Appl. Phys. Lett. 59 2251 (1991)
  46. Nakamura S, Senoh M, Iwasa N, Nagahama S, Yamada T, Mukai T "Superbright green InGaN single-quantum-well-structure light-emitting diodes" Jpn. J. Appl. Phys. 34 L1332 (1995)
  47. Amano H, Akasaki I "Fabrication and properties of GaN-based quantum well structure for short wavelength light emitter" Extended Abstract, Intern. Conf. Solid State Devices and Materials. V-7 (1995) p. 683
  48. Yamada M, Mitani T, Narukawa Y, Shioji S, Niki I, Sonobe S, Deguchi K, Sano M, Mukai T "InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode" Jpn. J. Appl. Phys. 41 L1431 (2002)
  49. Bando K, Sakano K, Nobuchi Y, Shimizu Y "Development of high-bright and pure-white LED lamp" J. Light Visual Environment 22 2 (1998)
  50. Shimizu Y, Banno A "Light-emitting diode" Jpn. Pat, 2,927,279 (1999), in Japanese
  51. Amano H, Asahi T, Akasaki I "Stimulated emission near ultraviolet at room temperature from a GaN film grown on sapphire by MOVPE using an AlN buffer layer" Jpn. J. Appl. Phys. 29 L205 (1990)
  52. Akasaki I, Amano H "MOVPE growth of high quality AlxGa1 − xN/GayIn1 − yN (x ≥ 0, y ≤ 1) heterostructure for short wavelength light emitter" MRS Symp. Proc. 339 443 (1994)
  53. Akasaki I, Amano H, Suemune I IOP Conf. Ser. 142 7 (1996)
  54. Takeuchi T, Sota S, Katsuragawa M, Komori M, Takeuchi H, Amano H, Akasaki I "Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells" Jpn. J. Appl. Phys. 36 L382 (1997)
  55. Takeuchi T, Wetzel C, Yamaguchi S, Sakai H, Amano H, Akasaki I "Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect" Appl. Phys. Lett. 73 1691 (1998)
  56. Akasaki I, Amano H, Sota S, Sakai H, Tanaka T, Koike M "Stimulated emission by current injection from an AlGaN/GaN/GaInN quantum well device" Jpn. J. Appl. Phys. 34 L1517 (1995)
  57. Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y "InGaN-based multi-quantum well-structure laser diodes" Jpn. J. Appl. Phys. 35 L74 (1996)
  58. Akasaki I, Sota S, Sakai H, Tanaka T, Koike M, Amano H "Shortest wave-length semiconductor laser diode" Electron. Lett. 32 1105 (1996)
  59. Iida K, Kawashima T, Miyazaki A, Kasugai H, Mishima S, Honshio A, Miyake Y, Iwaya M, Amano H, Akasaki I "350.9 nm UV laser diode grown on low-dislocation-density AlGaN" Jpn. J. Appl. Phys. 43 L499 (2004)
  60. Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Sugimoto Y, Kiyoku H "Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes" Appl. Phys. Lett. 69 4056 (1996)
  61. Pernot C, Hirano A, Iwaya M, Detchprohm T, Amano H, Akasaki I "Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes" Jpn. J. Appl. Phys. 39 L387 (2000)
  62. Fujii T, Tsuyukuchi N, Iwaya M, Kamiyama S, Amano H, Akasaki I "High on/off ratio in enhancement-mode AlxGa1 − xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact" Jpn. J. Appl. Phys. 45 L1048 (2006)
  63. Itoh K, Kawamoto T, Amano H, Hiramatsu K, Akasaki I "Metalorganic vapor phase epitaxial growth and properties of GaN/Al0.1Ga0.9N layered structures" Jpn. J. Appl. Phys. 30 1924 (1991)
  64. Takeuchi T, Amano H, Akasaki I "Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells" Jpn. J. Appl. Phys. 39 413 (2000)
  65. Yamamoto S, Zhao Y, Pan C C, Chung R B, Fujito K, Sonoda J, DenBaars S P, Nakamura S "High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (2021) GaN substrates" Appl. Phys. Exp. 3 122102 (2010)
  66. Zhao Y, Tanaka S, Pan C-C, Fujito K, Feezell D, Speck J S, DenBaars S P, Nakamura S "High-power blue-violet semipolar (2021) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2" Appl. Phys. Express 4 082104 (2011)
  67. Takagi S, Enya Y, Kyono T, Adachi M, Yoshizumi Y, Sumitomo T, Yamanaka Y, Kumano T, Tokuyama S, Sumiyoshi K, Saga N, Ueno M, Katayama K, Ikegami T, Nakamura T, Yanashima K, Nakajima H, Tasai K, Naganuma K, Fuutagawa N, Takiguchi Y, Hamaguchi T, Ikeda M "High-power (over 100 mW) green laser diodes on semipolar 2021 GaN substrates operating at wavelengths beyond 530 nm" Appl. Phys. Express 5 082102 (2012)
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