Collective exciton effects in spatially separated electron – hole layers in semiconductors

V.B. Timofeev
Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation

PACS: 03.75.Nt, 71.35.Lk, 73.20.Mf (all)
DOI: 10.1070/PU2005v048n03ABEH002123
URL: https://ufn.ru/en/articles/2005/3/f/
Web of Science

000230494900006
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2005PhyU...48..295T
Citation: Timofeev V B "Collective exciton effects in spatially separated electron-hole layers in semiconductors" Phys. Usp. 48 295–306 (2005)

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PT Journal Article
TI Collective exciton effects
in spatially separated electron – hole layers
in semiconductors
AU Timofeev V B
FAU Timofeev VB
DP 10 Mar, 2005
TA Phys. Usp.
VI 48
IP 3
PG 295-306
RX 10.1070/PU2005v048n03ABEH002123
URL https://ufn.ru/en/articles/2005/3/f/
SO Phys. Usp. 2005 Mar 10;48(3):295-306