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Collective exciton effects in spatially separated electron-hole layers in semiconductors


Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
Fulltext is available at IOP
PACS: 03.75.Nt, 71.35.Lk, 73.20.Mf (all)
DOI: 10.1070/PU2005v048n03ABEH002123
URL: https://ufn.ru/en/articles/2005/3/f/
Citation: Timofeev V B "Collective exciton effects in spatially separated electron-hole layers in semiconductors" Phys. Usp. 48 295–306 (2005)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks
@article{Timofeev:2005,
	author = {V. B. Timofeev},
	title = {Collective exciton effects
in spatially separated electron – hole layers
in semiconductors},
	publisher = {Physics-Uspekhi},
	year = {2005},
	journal = {Phys. Usp.},
	volume = {48},
	number = {3},
	pages = {295-306},
	url = {https://ufn.ru/en/articles/2005/3/f/},
	doi = {10.1070/PU2005v048n03ABEH002123}
}
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