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Metal-insulator transitions and the effects of electron-electron interactions in two-dimensional electron systems


Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation

Experimental results on metal-insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed. Special attention is given to recent results on strongly enhanced spin susceptibility and effective mass in low-disordered silicon MOSFETs.

Fulltext is available at IOP
PACS: 71.30.+h, 73.40.Qv, 73.43.−f (all)
DOI: 10.1070/PU2005v048n02ABEH001944
URL: https://ufn.ru/en/articles/2005/2/b/
Citation: Shashkin A A "Metal-insulator transitions and the effects of electron-electron interactions in two-dimensional electron systems" Phys. Usp. 48 129–149 (2005)
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Оригинал: Шашкин А А «Переходы металл-диэлектрик и эффекты электрон-электронного взаимодействия в двумерных электронных системах» УФН 175 139–161 (2005); DOI: 10.3367/UFNr.0175.200502b.0139

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