A.L. Aseeva,
E.G. Batyeva,
V.S. L’vov,
K.A. Kikoin,
L.I. Magarilla,
M.V. Sadovskiib,
A.V. Chaplika,
A.L. Chernyshev,
M.V. Entin aRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation bInstitute of Electrophysics, Ural Branch of the Russian Academy of Sciences, ul. Amundsena 106, Ekaterinburg, 620016, Russian Federation
PACS:01.60.+q DOI:10.1070/PU2002v045n01ABEH001149 URL: https://ufn.ru/en/articles/2002/1/f/ 000175529500006 Citation: Aseev A L, Batyev E G, L’vov V S, Kikoin K A, Magarill L I, Sadovskii M V, Chaplik A V, Chernyshev A L, Entin M V "In memory of Viktor Iosifovich Belinicher" Phys. Usp.45 101–102 (2002)
TY JOUR
TI In memory of Viktor Iosifovich Belinicher
AU Aseev, A. L.
AU Batyev, E. G.
AU L’vov, V. S.
AU Kikoin, K. A.
AU Magarill, L. I.
AU Sadovskii, M. V.
AU Chaplik, A. V.
AU Chernyshev, A. L.
AU Entin, M. V.
PB Physics-Uspekhi
PY 2002
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 45
IS 1
SP 101-102
UR https://ufn.ru/en/articles/2002/1/f/
ER https://doi.org/10.1070/PU2002v045n01ABEH001149