Metallic single-electron transistor without traditional tunnel barriers

V.A. Krupenin^a, A.B. Zorin^b, D.E. Presnov^b, M.N. Savvateev^a, J. Niemeyer^c
^aLomonosov Moscow State University, Faculty of Physics, Laboratory of Cryoelectronics, Vorob'evy Gory, Moscow, 119992, Russia , Moscow , Russia
^bLomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
^cPhysikalisch-Technische Bundesanstalt, Braunschweig, Germany

We report a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips ( $\sim1$ $\mu$ m long) connecting a $1 \mu$ m-long Al island to two Al outer electrodes. These resistors replace small-area oxide tunnel junctions of traditional SETs. Our transistor with a total asymptotic resistance of $110$ k $\Omega$ showed a very sharp Coulomb blockade and reproducible, deep and strictly eperiodic gate modulation in wide ranges of bias currents $I$ and gate voltages $V_g$ . In the Coulomb blockade region ( $|V|\leqslant$ about $0.5$ mV), we observed a strong suppression of the co-tunneling current allowing appreciable modulation curves $V(V_g)$ to be measured at currents $I$ as low as $100$ fA. The noise figure of our SET was found to be similar to that of typical Al/AlO $_x$ /Al single-electron transistors, viz. $\delta Q\approx5\times 10^{-4}e/\sqrt{\mathrm{Hz}}$ at $10$ Hz.

PACS: 71.30.+h, 73.23.Hk, 74.50.+r, 74.76.-w (all)
DOI: 10.1070/1063-7869/44/10S/S25
URL: https://ufn.ru/en/articles/2001/13/y/
Citation: Krupenin V A, Zorin A B, Presnov D E, Savvateev M N, Niemeyer J "Metallic single-electron transistor without traditional tunnel barriers" Phys. Usp. 44 113–116 (2001)

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Оригинал: Krupenin V A, Zorin A B, Presnov D E, Savvateev M N, Niemeyer J «Metallic single-electron transistor without traditional tunnel barriers» УФН 171 113–116 (2001); DOI: 10.1070/1063-7869/44/10S/S25