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Vortex states at low temperature in disordered thin and thick films of a-Mo$_x$Si$_{1-x}$Tokyo Institute of Technology, Ookayama, Meguro-ku, 2-12-1 Tokyo, 152-8550, Japan , Tokyo , Japan We have measured the ac complex resistivity in the linear regime, as well as dc resistivity, for thick ($100$, $300$ nm) amorphous (a-)Mo$_x$Si$_{1-x}$ films at low temperatures ($T > 0.04$ K) in constant fields $B$. The critical behavior associated with the second-order transition has been observed for both dc and ac resistivities, which is similar to that observed for granular indium films. This is the first convincing evidence for the vortex glass transition (VGT) in the homogeneously disordered low-$T_C$ superconductors containing microscopic pinning centers. We have found that the VGT persists down to $T\sim0.1T_{C0}$ up to $B\sim0.9B_{C2}(0)$, where $T_{C0}$ and $B_{C2}(0)$ are the mean-field transition temperature and upper critical field at $T=0$, respectively. At $T\to0$ the VGT line $B_g(T)$ extrapolates to a field below $B_{C2}(0)$, indicative of the presence of a $T=0$ quantum-vortex-liquid phase in the region $B_g(0)<B<B_{C2}(0)$.
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