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Diffusive single and multiply connected SNS systems with high-transparent interfacesa Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation b Interuniversity Microelectronics Centre, Kapeldreef, 75 Leuven, B-3001, Belgium , Leuven , Belgium We present low-temperature transport measurements on single and multiply connected SNS systems fabricated on the basis of superconducting polycrystalline PtSi film. Zero bias anomaly (ZBA) and subharmonic energy gap structure (SGS) originating from the proximity effects and the multiple Andreev reflections were observed and carefully studied. It was found that the ZBA is not described by any theories developed for SNS junctions with high-transparent NS interface. The value of excess conductance and the width of ZBA for single SNS junction far exceed values predicted by up-to-date theories.
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