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Effective polarized electron emitters based on semiconductor nanostructures


St. Petersburg State Technical University, Politekhnicheskaya str. 29, St. Petersburg, 195251, Russian Federation
Fulltext pdf (152 KB)
Fulltext is also available at DOI: 10.1070/PU2001v044n12ABEH001060
PACS: 29.25.Bx, 29.27.Hj, 79.60.Jv (all)
DOI: 10.1070/PU2001v044n12ABEH001060
URL: https://ufn.ru/en/articles/2001/12/j/
000174927700010
Citation: Subashiev A V "Effective polarized electron emitters based on semiconductor nanostructures" Phys. Usp. 44 1310–1312 (2001)
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Оригинал: Субашиев А В «Эффективные эмиттеры поляризованных электронов на основе полупроводниковых наноструктур» УФН 171 1376–1379 (2001); DOI: 10.3367/UFNr.0171.200112j.1376

References (12) ↓ Cited by (3) Similar articles (20)

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  11. Subashiev A V et al. Proc. of 24th Int. Conf. on Physics of Semiconductors (ICPS-24), Jerusalem, 1998 (1998); Subashiev A V et al. Preprint SLAC-PUB-7922 (Stanford, 1998)
  12. Andreev A D, Subashiev A V Proc. 9th Int. Symp. "Nanostructures: Physics and Technology", St. Petersburg, June, 2001 (St. Petersburg, 2001) p. 269

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