Issues

 / 

1998

 / 

June

  

Special issue


Lattice and magnetic effects in doped manganites


Landau Institute for Theoretical Physics, Russian Academy of Sciences, ul. Kosygina 2, Moscow, 119334, Russian Federation

The ’double exchange’ mechanism and Jahn-Teller instabilities are shown to account for the low-temperature properties of slightly doped LaMnO3 in the framework of the band insulator model. Analysis of the doping of La1-xAxMnO3 with divalent A atoms suggests that Coulomb forces cause holes to be localized near dopants, which makes the formation of conducting clusters along these charged centers a major factor in the physics of such compounds. A percolation theory analysis of experimental data is given. The two-phase coexistence regime and the large-volume Fermi surface at high concentrations are discussed. The relevance of some of the results to doping physics in cuprates is suggested.

Fulltext pdf (200 KB)
Fulltext is also available at DOI: 10.1070/PU1998v041n06ABEH000409
PACS: 64.60.Ak, 71.70.Gm, 71.70.−d, 75.50.Pp (all)
DOI: 10.1070/PU1998v041n06ABEH000409
URL: https://ufn.ru/en/articles/1998/6/g/
000075347000007
Citation: Gor’kov L P "Lattice and magnetic effects in doped manganites" Phys. Usp. 41 589–594 (1998)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Горьков Л П «Решеточные и магнитные эффекты в легированных манганитах» УФН 168 665–671 (1998); DOI: 10.3367/UFNr.0168.199806g.0665

References (30) ↓ Cited by (101) Similar articles (7)

  1. Gor’kov L P, Kresin V Z Pis’ma Zh. Eksp. Teor. Fiz. (1998, in press)
  2. Khomskii D I, Sawatzky G A Solid State Commun. 102 87 (1997)
  3. Zener C Phys. Rev. 82 403 (1951)
  4. Anderson P W, Hasegawa H Phys. Rev. 100 675 (1955)
  5. Zhao G et al. Nature (London) 381 676 (1996)
  6. Hwang H Y et al. Phys. Rev. Lett. 75 914 (1995)
  7. Kugel’ K I, Khomskii D I Usp. Fiz. Nauk 136 621 (1982) [Sov. Phys. Usp. 25 231 (1982)]
  8. Englman R The Jahn-Teller Effect in Molecules and Crystals (London, New York: Wiley-Interscience, 1972)
  9. Landau L D, Lifshitz E M Kvantovaya Mekhanika (Quantum Mechanics, Moscow: Nauka, 1994) p. 407 [Translated into English (Oxford, New York: Pergamon Press, 1977)]
  10. Kanamori J J. Appl. Phys. (Suppl.)31 14S (1960)
  11. Goodenough J, in Progress in Solid State Chemistry Vol. 5 (Ed. H Reiss, New York: Pergamon, 1971) p. 145; Anderson P W, in Magnetism Vol. 1 (Eds G T Rado, H Suhl, New York: Academic Press, 1963) p. 75
  12. Millis A J, Shraiman B I, Mueller R Phys. Rev. Lett. 77 175 (1996)
  13. Wollan E O, Koehler W C Phys. Rev. 100 545 (1955)
  14. Rashba E, in Excitons (Modern Problems in Condensed Matter Sciences, Vol. 2, Eds E I Rashba, M D Sturge, Amsterdam, New York: North-Holland Pub. Co., Elsevier Science Pub. Co., 1982) p. 473; Tanino H, Kobayashi K J. Phys. Soc. Jpn. 52 1446 (1983)
  15. Gor’kov L P, Sokol A V Pis’ma Zh. Eksp. Teor. Fiz. 46 333 (1987) [JETP Lett. 46 420 (1987)]
  16. Emery V J, Kivelson S A, Lin H Q Phys. Rev. Lett. 64 475 (1990)
  17. Yunoki S et al. Phys. Rev. Lett. 80 845 (1998)
  18. Urushibara A et al. Phys. Rev. B 51 14103 (1995)
  19. de Gennes P-G Phys. Rev. 118 141 (1960)
  20. Shklovskii B I, Efros A L Electronic Properties of Doped Semiconductors (Springer Series in Solid State Sciences; 45, Berlin, New York: Springer-Verlag, 1984); Deutcher G, in Chance and Matter (Eds J Soulettie, J Vannimenus, R Stora, Amsterdam, New York: Elsevier Pub. Co.; North-Holland, 1987) p. 1; Hertz J Phys. Scripta 10 1 (1985)
  21. Lofland S E et al. Phys. Rev. B 56 13705 (1997)
  22. Allodi G et al. Phys. Rev. B 56 6036 (1997)
  23. Sharma R P et al. Phys. Rev. B 54 10014 (1996)
  24. Louca D et al. Phys. Rev. B 56 R8475 (1997)
  25. Shender E F, Shklovskii B I Phys. Lett. A 55 77 (1975)
  26. Varma C M Phys. Rev. B 54 7328 (1996)
  27. Park S H et al. Phys. Rev. B 56 67 (1997)
  28. Fisher M E, Langer J S Phys. Rev. Lett. 20 665 (1968)
  29. Kirkpatrick S Rev. Mod. Phys. 45 574 (1973)
  30. Vasiliu-Doloc L et al. J. Appl. Phys. (1998, to be published)

© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions