Issues

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1996

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July

  

Bibliography


Handbook on the physical properties of Ge, Si, GaAs and InP byA Dargys and J Kundrotas


Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
Fulltext pdf (220 KB)
Fulltext is also available at DOI: 10.1070/PU1996v039n07ABEH001526
PACS: 01.30.Kj, 73.61.−r, 72.80.Ey, 78.30.Fs (all)
DOI: 10.1070/PU1996v039n07ABEH001526
URL: https://ufn.ru/en/articles/1996/7/j/
A1996VC59800011
Citation: Vavilov V S "Handbook on the physical properties of Ge, Si, GaAs and InP byA Dargys and J Kundrotas" Phys. Usp. 39 757–757 (1996)
BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks
TY JOUR
TI Handbook on the physical properties of Ge, Si, GaAs and InP
byA Dargys and J Kundrotas AU Vavilov, V. S. PB Physics-Uspekhi PY 1996 JO Physics-Uspekhi JF Physics-Uspekhi JA Phys. Usp. VL 39 IS 7 SP 757-757 UR https://ufn.ru/en/articles/1996/7/j/ ER https://doi.org/10.1070/PU1996v039n07ABEH001526

Оригинал: Вавилов В С «Современные сведения о полупроводниках» УФН 166 807–808 (1996); DOI: 10.3367/UFNr.0166.199607j.0807

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