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1994

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Amorphous semiconductors prepared by quenching under high pressure

 a,  a,  a,  b
a Prokhorov General Physics Institute of the Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russian Federation
b Vereshchagin Institute for High Pressure Physics, Russian Academy of Sciences, Kaluzhskoe shosse 14, Troitsk, Moscow, 108840, Russian Federation

Amorphous semiconductors synthesised by high-pressure quenching (ASHP) are discussed as a new class of materials of potential value in explaning the mechanisms of solid-state amorphisation processes and in testing models of an effective medium and of the scaling theory and the percolation theory. The formation of multicomponent systems, the superconductivity induced by amorphisation, the stability regions of metastable phases, and the effect of doping on the physical properties of tetrahedral amorphous semiconductors have been studied by using a wide range of experimental methods capable of establishing the interrelationship and the sequence of the phase transformations in ASHP produced by changes in the physical parameters. The bibliography contains 104 references.

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Fulltext is also available at DOI: 10.1070/PU1994v037n02ABEH000008
DOI: 10.1070/PU1994v037n02ABEH000008
URL: https://ufn.ru/en/articles/1994/2/c/
A1994NB28300003
Citation: Demishev S V, Kosichkin Yu V, Sluchanko N E, Lyapin A G "Amorphous semiconductors prepared by quenching under high pressure" Phys. Usp. 37 185–217 (1994)
BibTexBibNote ® (generic)BibNote ® (RIS)Medline RefWorks
RT Journal
T1 Amorphous semiconductors prepared by quenching under high pressure
A1 Demishev,S.V.
A1 Kosichkin,Yu.V.
A1 Sluchanko,N.E.
A1 Lyapin,A.G.
PB Physics-Uspekhi
PY 1994
FD 10 Feb, 1994
JF Physics-Uspekhi
JO Phys. Usp.
VO 37
IS 2
SP 185-217
DO 10.1070/PU1994v037n02ABEH000008
LK https://ufn.ru/en/articles/1994/2/c/

Оригинал: Демишев С В, Косичкин Ю В, Случанко Н Е, Ляпин А Г «Аморфные полупроводники, синтезированные закалкой под давлением» УФН 164 195–229 (1994); DOI: 10.3367/UFNr.0164.199402c.0195

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