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Current state of semiconductor silicon technology and material science


Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
PACS: 01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
DOI: 10.1070/PU1990v033n06ABEH002604
URL: https://ufn.ru/en/articles/1990/6/g/
Citation: Timofeev V B "Current state of semiconductor silicon technology and material science" Sov. Phys. Usp. 33 (6) 492–493 (1990)
BibTexBibNote ® (generic)BibNote ® (RIS)Medline RefWorks
RT Journal
T1 Current state of semiconductor silicon technology and material science
A1 Timofeev,V.B.
PB Physics-Uspekhi
PY 1990
FD 10 Jun, 1990
JF Physics-Uspekhi
JO Phys. Usp.
VO 33
IS 6
SP 492-493
DO 10.1070/PU1990v033n06ABEH002604
LK https://ufn.ru/en/articles/1990/6/g/

Оригинал: Тимофеев В Б «Современное состояние технологии и материаловедения полупроводникового кремния» УФН 160 (6) 168–170 (1990); DOI: 10.3367/UFNr.0160.199006g.0168

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