Current state of semiconductor silicon technology and material science

V.B. Timofeev
Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation

PACS: 01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
DOI: 10.1070/PU1990v033n06ABEH002604
URL: https://ufn.ru/en/articles/1990/6/g/
Citation: Timofeev V B "Current state of semiconductor silicon technology and material science" Sov. Phys. Usp. 33 (6) 492–493 (1990)

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RT Journal
T1 Current state of semiconductor silicon technology and material science
A1 Timofeev,V.B.
PB Physics-Uspekhi
PY 1990
FD 10 Jun, 1990
JF Physics-Uspekhi
JO Phys. Usp.
VO 33
IS 6
SP 492-493
DO 10.1070/PU1990v033n06ABEH002604
LK https://ufn.ru/en/articles/1990/6/g/

Оригинал: Тимофеев В Б «Современное состояние технологии и материаловедения полупроводникового кремния» УФН 160 (6) 168–170 (1990); DOI: 10.3367/UFNr.0160.199006g.0168