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Current state of semiconductor silicon technology and material science


Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
Text can be downloaded in Russian. English translation is available here.
PACS: 01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
DOI: 10.1070/PU1990v033n06ABEH002604
URL: https://ufn.ru/en/articles/1990/6/g/
Citation: Timofeev V B "Current state of semiconductor silicon technology and material science" Sov. Phys. Usp. 33 (6) 492–493 (1990)
BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks
PT Journal Article
TI Current state of semiconductor silicon technology and material science
AU Timofeev V B
FAU Timofeev VB
DP 10 Jun, 1990
TA Phys. Usp.
VI 33
IP 6
PG 492-493
RX 10.1070/PU1990v033n06ABEH002604
URL https://ufn.ru/en/articles/1990/6/g/
SO Phys. Usp. 1990 Jun 10;33(6):492-493

Оригинал: Тимофеев В Б «Современное состояние технологии и материаловедения полупроводникового кремния» УФН 160 (6) 168–170 (1990); DOI: 10.3367/UFNr.0160.199006g.0168

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