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Current state of semiconductor silicon technology and material science


Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
PACS: 01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
DOI: 10.1070/PU1990v033n06ABEH002604
URL: https://ufn.ru/en/articles/1990/6/g/
Citation: Timofeev V B "Current state of semiconductor silicon technology and material science" Sov. Phys. Usp. 33 (6) 492–493 (1990)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks
@article{Timofeev:1990,
	author = {V. B. Timofeev},
	title = {Current state of semiconductor silicon technology and material science},
	publisher = {Physics-Uspekhi},
	year = {1990},
	journal = {Phys. Usp.},
	volume = {33},
	number = {6},
	pages = {492-493},
	url = {https://ufn.ru/en/articles/1990/6/g/},
	doi = {10.1070/PU1990v033n06ABEH002604}
}

Оригинал: Тимофеев В Б «Современное состояние технологии и материаловедения полупроводникового кремния» УФН 160 (6) 168–170 (1990); DOI: 10.3367/UFNr.0160.199006g.0168

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