Issues

 / 

1990

 / 

June

  

Bibliography


Current state of semiconductor silicon technology and material science


Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
Fulltext pdf (60 KB)
Fulltext is also available at DOI: 10.1070/PU1990v033n06ABEH002604
PACS: 01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
DOI: 10.1070/PU1990v033n06ABEH002604
URL: https://ufn.ru/en/articles/1990/6/g/
Citation: Timofeev V B "Current state of semiconductor silicon technology and material science" Sov. Phys. Usp. 33 (6) 492–493 (1990)
BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks
TY JOUR
TI Current state of semiconductor silicon technology and material science
AU Timofeev, V. B.
PB Physics-Uspekhi
PY 1990
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 33
IS 6
SP 492-493
UR https://ufn.ru/en/articles/1990/6/g/
ER https://doi.org/10.1070/PU1990v033n06ABEH002604

Оригинал: Тимофеев В Б «Современное состояние технологии и материаловедения полупроводникового кремния» УФН 160 (6) 168–170 (1990); DOI: 10.3367/UFNr.0160.199006g.0168

© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions