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Current state of semiconductor silicon technology and material science


Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
Fulltext pdf (60 KB)
Fulltext is also available at DOI: 10.1070/PU1990v033n06ABEH002604
PACS: 01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
DOI: 10.1070/PU1990v033n06ABEH002604
URL: https://ufn.ru/en/articles/1990/6/g/
Citation: Timofeev V B "Current state of semiconductor silicon technology and material science" Sov. Phys. Usp. 33 (6) 492–493 (1990)
BibTex BibNote ® (generic)BibNote ® (RIS)MedlineRefWorks
%0 Journal Article
%T Current state of semiconductor silicon technology and material science
%A V. B. Timofeev
%I Physics-Uspekhi
%D 1990
%J Phys. Usp.
%V 33
%N 6
%P 492-493
%U https://ufn.ru/en/articles/1990/6/g/
%U https://doi.org/10.1070/PU1990v033n06ABEH002604

Оригинал: Тимофеев В Б «Современное состояние технологии и материаловедения полупроводникового кремния» УФН 160 (6) 168–170 (1990); DOI: 10.3367/UFNr.0160.199006g.0168

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