Electronic transport in hydrogenated amorphous semiconductors

PACS: 01.30.Vv, 72.80.Ng, 72.20.Ee, 71.23.Cq, 72.10.−d (all)
DOI: 10.1070/PU1990v033n10ABEH002650
URL: https://ufn.ru/en/articles/1990/10/k/
Citation: Silin A P "Electronic transport in hydrogenated amorphous semiconductors" Sov. Phys. Usp. 33 (10) 877–877 (1990)

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@article{Silin:1990,
	author = {A. P. Silin},
	title = {Electronic transport in hydrogenated amorphous semiconductors},
	publisher = {Physics-Uspekhi},
	year = {1990},
	journal = {Phys. Usp.},
	volume = {33},
	number = {10},
	pages = {877-877},
	url = {https://ufn.ru/en/articles/1990/10/k/},
	doi = {10.1070/PU1990v033n10ABEH002650}
}

Оригинал: Силин А П «Электронный транспорт в гидрогенизированных аморфных полупроводниках» УФН 160 (10) 202–203 (1990); DOI: 10.3367/UFNr.0160.199010o.0202