Issues

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1989

 / 

June

  

Reviews of topical problems


Physical properties of the semiconductor-electrolyte interface


Research and Production Company Lasernaya Tekhnika, ul. Shoprona 21, Erevan, 375090, Armenia

This review discusses the structure of an electrical double layer formed at the semiconductor-electrolyte interface, as well as the energy states and imperfections in the electrolyte and on the semiconductor surface. A considerable part of the review is devoted to the results of investigations of photoelectric effects, luminescence, reflection, and electroreflection at this interface. The quantum size effects which occur in semiconductor electrodes and in colloids and the injection of hot electrons into an electrolyte are discussed in later sections of the review. A classification of photoelectrochemical cells is given and current data are provided on devices for conversion of solar or laser radiation energy into electrical and chemical energy.

Fulltext pdf (996 KB)
Fulltext is also available at DOI: 10.1070/PU1989v032n06ABEH002726
PACS: 72.40.+w, 73.40.Mr, 78.55.Et, 82.45.Gj, 82.45.Vp (all)
DOI: 10.1070/PU1989v032n06ABEH002726
URL: https://ufn.ru/en/articles/1989/6/c/
Citation: Arutyunyan V M "Physical properties of the semiconductor-electrolyte interface" Sov. Phys. Usp. 32 521–542 (1989)
BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks
TY JOUR
TI Physical properties of the semiconductor-electrolyte interface
AU Arutyunyan, V. M.
PB Physics-Uspekhi
PY 1989
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 32
IS 6
SP 521-542
UR https://ufn.ru/en/articles/1989/6/c/
ER https://doi.org/10.1070/PU1989v032n06ABEH002726

Оригинал: Арутюнян В М «Физические свойства границы полупроводник-электролит» УФН 158 255–291 (1989); DOI: 10.3367/UFNr.0158.198906c.0255

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