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Electronic structure of quasicubic crystals: energy bands, dielectric properties, and defects in narrow-gap semiconductors.

 a,
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
PACS: 71.23.Ft, 77.22.−d, 71.55.Ht (all)
DOI: 10.1070/PU1986v029n06ABEH003426
URL: https://ufn.ru/en/articles/1986/6/h/
Citation: Volkov B A, Pankratov O A "Electronic structure of quasicubic crystals: energy bands, dielectric properties, and defects in narrow-gap semiconductors." Sov. Phys. Usp. 29 575–577 (1986)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks
@article{Volkov:1986,
	author = {B. A. Volkov and O. A. Pankratov},
	title = {Electronic structure of quasicubic crystals: energy bands, dielectric properties, and defects in narrow-gap semiconductors.},
	publisher = {Physics-Uspekhi},
	year = {1986},
	journal = {Phys. Usp.},
	volume = {29},
	number = {6},
	pages = {575-577},
	url = {https://ufn.ru/en/articles/1986/6/h/},
	doi = {10.1070/PU1986v029n06ABEH003426}
}

Оригинал: Волков Б А, Панкратов О А «Электронное строение квазикубических кристаллов: зоны, диэлектрические свойства, дефекты в узкощелевых полупроводниках» УФН 149 334–336 (1986); DOI: 10.3367/UFNr.0149.198606h.0334

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