Semiconductor–metal transition in liquid semiconductors

V.A. Alekseev, A.A. Andreev^a, M.V. Sadovskii^b
^aResearch Institute for Laser Physics, Birzhevaya liniya 12, St. Petersburg, 199034, Russian Federation
^bInstitute of Electrophysics, Ural Branch of the Russian Academy of Sciences, ul. Amundsena 106, Ekaterinburg, 620016, Russian Federation

CONTENTS[br] 1. Introduction 551[br] 2. Theoretical models of the semiconductor-metal transition in disordered systems 552[br] 3. Semiconductor-metal transition in molten semiconductors at high temperatures 561[br] 4. Semiconductor-metal transition and criterion for minimal metallic conductivity of melts at [i]T[/i]>[i]T[/i][sub]mp[/sub] 564[br] 5. Metal-semiconductor transition near critical points of metals and semiconductors 565[br] A. Results of experimental investigations of cesium and mercury 565[br] 1) Liquid metal range 567[br] 2) Transition range 567[br] 3) Range with some properties of liquid semiconductors 568[br] 4) Range of dense ionized gases 569[br] B. Results of experimental investigations of selenium and arsenic. Se–Te system 570[br] 1) Selenium and arsenic 570[br] 2) Se–Te system 571[br] 6. Conclusions 571[br] References 572[br]

PACS: 72.60.+g, 72.80.Ph, 72.20.Pa, 71.25.Lf (all)
DOI: 10.1070/PU1980v023n09ABEH005855
URL: https://ufn.ru/en/articles/1980/9/c/
Citation: Alekseev V A, Andreev A A, Sadovskii M V "Semiconductor-metal transition in liquid semiconductors" Sov. Phys. Usp. 23 551–575 (1980)

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TY JOUR
TI Semiconductor–metal transition in liquid semiconductors
AU Alekseev, V. A.
AU Andreev, A. A.
AU Sadovskii, M. V.
PB Physics-Uspekhi
PY 1980
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 23
IS 9
SP 551-575
UR https://ufn.ru/en/articles/1980/9/c/
ER https://doi.org/10.1070/PU1980v023n09ABEH005855

Оригинал: Алексеев В А, Андреев А А, Садовский М В «Переход полупроводник — металл в жидких полупроводниках» УФН 132 47–90 (1980); DOI: 10.3367/UFNr.0132.198009c.0047