Mercury telluride—a zero-gap semiconductor

A review is made of the principal properties of mercury telluride which is a member of a new class of substances--zero-gap semiconductors. The factors responsible for the zero-gap state of mercury chalcogenides are discussed. It is shown that an inverted band structure is formed mainly because of relativistic corrections. Specific properties of mercury telluride are related to its zero gap, $p$-type electron states in the conduction band, nonparabolicity of this band, resonance impurity states, and permittivity anomalies. An analysis is made of the conditions for the appearance of a forbidden gap in mercury telluride under the influence of external factors.

PACS: 71.30.Mw
DOI: 10.1070/PU1976v019n06ABEH005265
URL: https://ufn.ru/en/articles/1976/6/b/
Citation: Berchenko N N, Pashkovskii M V "Mercury telluride—a zero-gap semiconductor" Sov. Phys. Usp. 19 462–480 (1976)

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PT Journal Article
TI Mercury telluride—a zero-gap semiconductor
AU Berchenko N N
FAU Berchenko NN
AU Pashkovskii M V
FAU Pashkovskii MV
DP 10 Jun, 1976
TA Phys. Usp.
VI 19
IP 6
PG 462-480
RX 10.1070/PU1976v019n06ABEH005265
URL https://ufn.ru/en/articles/1976/6/b/
SO Phys. Usp. 1976 Jun 10;19(6):462-480

Оригинал: Берченко Н Н, Пашковский М В «Теллурид ртути — полупроводник с нулевой запрещенной зоной» УФН 119 223–255 (1976); DOI: 10.3367/UFNr.0119.197606b.0223