Mercury telluride—a zero-gap semiconductor

A review is made of the principal properties of mercury telluride which is a member of a new class of substances--zero-gap semiconductors. The factors responsible for the zero-gap state of mercury chalcogenides are discussed. It is shown that an inverted band structure is formed mainly because of relativistic corrections. Specific properties of mercury telluride are related to its zero gap, $p$-type electron states in the conduction band, nonparabolicity of this band, resonance impurity states, and permittivity anomalies. An analysis is made of the conditions for the appearance of a forbidden gap in mercury telluride under the influence of external factors.

PACS: 71.30.Mw
DOI: 10.1070/PU1976v019n06ABEH005265
URL: https://ufn.ru/en/articles/1976/6/b/
Citation: Berchenko N N, Pashkovskii M V "Mercury telluride—a zero-gap semiconductor" Sov. Phys. Usp. 19 462–480 (1976)

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TY JOUR
TI Mercury telluride—a zero-gap semiconductor
AU Berchenko, N. N.
AU Pashkovskii, M. V.
PB Physics-Uspekhi
PY 1976
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 19
IS 6
SP 462-480
UR https://ufn.ru/en/articles/1976/6/b/
ER https://doi.org/10.1070/PU1976v019n06ABEH005265

Оригинал: Берченко Н Н, Пашковский М В «Теллурид ртути — полупроводник с нулевой запрещенной зоной» УФН 119 223–255 (1976); DOI: 10.3367/UFNr.0119.197606b.0223