Semiconducting diamonds

A review is given of the current data on semiconducting diamonds, both natural and those prepared by doping in the course of crystal growth in the laboratory or by implantation of impurities in insulating crystals. The review deals with theoretical papers reporting calculations of the principal characteristics of the energy band structure of diamond, and with the results of experimental studies of the energy spectra, photoionization, charged-particle ionization, transport phenomena, and luminescence of semiconducting diamonds. Special attention is paid to the problem of the nature of electrically active acceptor and donor local centers. Actual and potential technical applications of secmiconducting diamonds are discussed briefly.

PACS: 71.30.Mw, 71.50.+t, 72.80.Le, 78.60.Dg
DOI: 10.1070/PU1976v019n04ABEH005251
URL: https://ufn.ru/en/articles/1976/4/c/
Citation: Vavilov V S, Konorova E A "Semiconducting diamonds" Sov. Phys. Usp. 19 301–316 (1976)

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PT Journal Article
TI Semiconducting diamonds
AU Vavilov V S
FAU Vavilov VS
AU Konorova E A
FAU Konorova EA
DP 10 Apr, 1976
TA Phys. Usp.
VI 19
IP 4
PG 301-316
RX 10.1070/PU1976v019n04ABEH005251
URL https://ufn.ru/en/articles/1976/4/c/
SO Phys. Usp. 1976 Apr 10;19(4):301-316

Оригинал: Вавилов В С, Конорова Е А «Полупроводниковые алмазы» УФН 118 611–639 (1976); DOI: 10.3367/UFNr.0118.197604c.0611