85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

List of articles

1. N.S. Averkiev “Spin relaxation anisotropy in two-dimensional semiconductors” 53 (7) (2010)
   75.76.+j, 76.30.-v, 85.75.-d (all)
2. S.A. Tarasenko “Spin photocurrents in semiconductors” 53 (7) (2010)
   75.76.+j, 78.56.-a, 85.75.-d (all)
3. Yu.G. Kusrayev “Spin phenomena in semiconductors: physics and applications” 53 (7) (2010)
   75.47.-m, 75.76.+j, 85.75.-d (all)
4. A.K. Zvezdin, K.A. Zvezdin, A.V. Khval’kovskii “The generalized Landau-Lifshitz equation and spin transfer processes in magnetic nanostructures” 51 412–417 (2008)
   72.25.-b, 75.75.+a, 85.75.-d (all)
5. Yu.V. Gulyaev, P.E. Zil’berman, E.M. Epshtein “Nano-sized structures incorporating ferromagnetic metal layers: new effects due to the passage of a perpendicular current” 51 409–412 (2008)
   72.25.-b, 75.75.+a, 85.75.-d (all)