T. Hashizume



Hitachi Advanced Research Laboratory, Hitachi Ltd.
Address: Hatoyama, Saitama, Japan


Articles

  1. R.Z. Bakhtizin, T. Hashizume, Q.-K. Xue, T. Sakurai “Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy40 1175–1187 (1997)
  2. R.Z. Bakhtizin, T. Hashizume, Sh. Wang, T. Sakurai “Scanning tunneling microscopy of fullerenes on metal and semiconductor surfaces40 275–290 (1997)

See also: R.Z. Bakhtizin, T. Sakurai, Q.-K. Xue, Sh. Wang

PACS: 61.14.Hg, 61.16.Di, 68.55.Bd, 68.35.Bs, 61.16.Ch, 61.46.+w, 68.65.+g

© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions