We review the history and modern state of silicon carbide and SiC-based devices. Main techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC structures used for post-growth processing are briefly reviewed. The state of the art achieved in developing SiC-devices is presented. The main problems that occur in developing SiC-equipment and prospects for designing and developing such equipment are analyzed.
Keywords: silicon carbide, bulk crystals, sublimation, polytypes, lateral overgrowth, dislocations, high-voltage power diodes, high-voltage subnanosecond pulse diodes, thyristors, bipolar junction transistors, analytical models, computer simulations, color center, spin, sensorics, magnetic field, ODMR, graphene, two-dimensional materials, Raman spectroscopy PACS:81.05.ue, 81.10.−h, 85.30.−z (all) DOI:10.3367/UFNe.2018.10.038437 URL: https://ufn.ru/en/articles/2019/8/c/ 000504891900002 2-s2.0-85076766922 2019PhyU...62..754L Citation: Lebedev A A, Ivanov P A, Levinshtein M E, Mokhov E N, Nagalyuk S S, Anisimov A N, Baranov P G "SiC-based electronics (100th anniversary of the Ioffe Institute)" Phys. Usp.62 754–794 (2019)
PT Journal Article
TI SiC-based electronics (100th anniversary of the Ioffe Institute)
AU Lebedev A A
FAU Lebedev AA
AU Ivanov P A
FAU Ivanov PA
AU Levinshtein M E
FAU Levinshtein ME
AU Mokhov E N
FAU Mokhov EN
AU Nagalyuk S S
FAU Nagalyuk SS
AU Anisimov A N
FAU Anisimov AN
AU Baranov P G
FAU Baranov PG
DP 10 Aug, 2019
TA Phys. Usp.
VI 62
IP 8
PG 754-794
RX 10.3367/UFNe.2018.10.038437
URL https://ufn.ru/en/articles/2019/8/c/
SO Phys. Usp. 2019 Aug 10;62(8):754-794
Received: 4th, September 2018, revised: 1st, October 2018, accepted: 4th, October 2018