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Hot electrons in silicon oxide

 a, b, c
a Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation
b Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russian Federation
c Novosibirsk State Technical University, pr. K. Marksa 20, Novosibirsk, 630092, Russian Federation

One particular use of amorphous silicon oxide SiO2, a material crucial for silicon device technology and design, is as a flash memory tunnel dielectric. The breakdown field of SiO2 exceeds 107 V cm−1. Strong electric fields in SiO2 give rise to phenomena that do not occur in crystalline semiconductors. In relatively low electric fields (104 — 106 V cm−1) the electron distribution function is determined by the scattering of electrons by longitudinal optical phonons. In high fields (in excess of 106 V cm−1) the distribution function is determined by electron-acoustic phonon scattering.

Fulltext pdf (734 KB)
Fulltext is also available at DOI: 10.3367/UFNe.2016.12.038008
Keywords: silicon oxide, hot electrons, scattering, optical phonons
PACS: 72.20.Ht, 72.20.Jv, 72.80.Sk, 73.40.Sx (all)
DOI: 10.3367/UFNe.2016.12.038008
URL: https://ufn.ru/en/articles/2017/9/c/
000417704200003
2-s2.0-85040973769
2017PhyU...60..902G
Citation: Gritsenko V A "Hot electrons in silicon oxide" Phys. Usp. 60 902–910 (2017)
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Received: 2nd, September 2016, revised: 7th, December 2016, 8th, December 2016

Îðèãèíàë: Ãðèöåíêî Â À «Ãîðÿ÷èå ýëåêòðîíû â îêñèäå êðåìíèÿ» ÓÔÍ 187 971–979 (2017); DOI: 10.3367/UFNr.2016.12.038008

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