One-electron transistors based on Coulomb blockade and quantum interference
Z.D. Kvon,
L.V. Litvin,
V.A. Tkachenko,
A.L. Aseev Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
PACS: 73.23.Hb DOI:10.1070/PU1999v042n04ABEH000458 URL: https://ufn.ru/en/articles/1999/4/j/ 000080487700010 Citation: Kvon Z D, Litvin L V, Tkachenko V A, Aseev A L "One-electron transistors based on Coulomb blockade and quantum interference" Phys. Usp.42 402–405 (1999)
PT Journal Article
TI One-electron transistors based on Coulomb blockade and quantum interference
AU Kvon Z D
FAU Kvon ZD
AU Litvin L V
FAU Litvin LV
AU Tkachenko V A
FAU Tkachenko VA
AU Aseev A L
FAU Aseev AL
DP 10 Apr, 1999
TA Phys. Usp.
VI 42
IP 4
PG 402-405
RX 10.1070/PU1999v042n04ABEH000458
URL https://ufn.ru/en/articles/1999/4/j/
SO Phys. Usp. 1999 Apr 10;42(4):402-405